Solution processed gate dielectrics for their use in Thin Film Transistors employing metal oxide-based semiconducting channels - Research Portal | Lancaster University

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School of Engineering

Associated organisational unit

Engineering of Microwaves, Terahertz and Light (E-MIT)

Keywords

Filed Effect Transistors

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Solution processed gate dielectrics for their use in Thin Film Transistors employing metal oxide-based semiconducting channels

Activity: Talk or presentation types › Invited talk

Dr George Adamopoulos - Speaker

14/03/2016 → 16/03/2016

Links

Invited speakers -2D Materials Field-Effect Transistors

Event (Conference)

Title	MEETING on Filed Effect Transistors
Date	14/03/16 → 18/03/16
Website	http://emnmeeting.org/FET/
Location
City	Kaohsiung
Country/Territory	Taiwan, Province of China
Degree of recognition	International event