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Results for GAAS

Publications & Outputs

  1. Vacancies and defect levels in III-V semiconductors

    Tahini, H. A., Chroneos, A., Murphy, S. T., Schwingenschloegl, U. & Grimes, R. W., 14/08/2013, In: Journal of Applied Physics. 114, 6, 9 p., 063517.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  2. Phase stability and the arsenic vacancy defect in InxGa1-xAs

    Murphy, S. T., Chroneos, A., Grimes, R. W., Jiang, C. & Schwingenschloegl, U., 17/11/2011, In: Physical review B. 84, 18, 7 p., 184108.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  3. Bistability of optically induced nuclear spin orientation in quantum dots

    Russell, A., Falko, V., Tartakovskii, A. I. & Skolnick, M. S., 13/11/2007, In: Physical review B. 76, 19, 6 p., 195310.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  4. Raman scattering in cluster-deposited nanogranular silicon films

    Konstantinovic, M. J., Bersier, S., Wang, X., Hayne, M., Lievens, P., Silverans, R. E. & Moshchalkov, V. V., 15/10/2002, In: Physical review B. 66, 16, p. - 4 p., 161311.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  5. Remote impurity scattering in modulation-doped GaAs/AlxGa1-xAs heterojunctions

    Hayne, M., Usher, A., Harris, J. J., Moshchalkov, V. V. & Foxon, C. T., 15/06/1998, In: Physical review B. 57, 23, p. 14813-14817 5 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  6. An elegant verification of the negative charge-state of the DX centre from mobility measurements of 2D electrons

    Hayne, M., Usher, A., Harris, J. J. & Foxon, C. T., 1996, In: Surface Science. 362, 1-3, p. 574-578 5 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review