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Results for GaSb

Publications & Outputs

  1. The Design, Optimisation, and Characterisation of GaSb/GaAs Quantum Ring-Based Vertical-Cavity Devices Emitting at Telecoms Wavelengths.

    Wilson, T., 5/02/2022, Lancaster University. 168 p.

    Research output: Thesis › Doctoral Thesis

  2. 1.55μm Efficient Temperature Insensitive GaSb-based Lasers for Telecoms Applications

    Bentley, M., 2021, Lancaster University. 165 p.

    Research output: Thesis › Doctoral Thesis

  3. Antimony based mid-infrared semiconductor materials and devices monolithically grown on silicon substrates

    Carrington, P. J., Delli, E., Hodgson, P. D., Repiso, E., Craig, A., Marshall, A. & Krier, A., 20/11/2017, 30th Annual Conference of the IEEE Photonics Society, IPC 2017. Institute of Electrical and Electronics Engineers Inc., p. 307-308 2 p.

    Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review

  4. Effect of an in-situ thermal annealing on the structural properties of self-assembled GaSb/GaAs quantum dots

    Fernández-Delgado, N., Herrera, M., Chisholm, M. F., Ahmad Kamarudin, M., Zhuang, Q., Hayne, M. & Molina, S. I., 15/02/2017, In: Applied Surface Science. 395, p. 136-139 4 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  5. Type II GaSb/GaAs quantum rings with extended photoresponse for efficient solar cells

    Carrington, P. J., Montesdeoca Cardenes, D., Fujita, H., James Asirvatham, J. S., Wagener, M., Botha, J. R., Marshall, A. R. J. & Krier, A., 23/09/2016, In: Proceedings of SPIE. 9937, 7 p., 993708.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  6. Characterisation of Ga(1-x)In(x)Sb quantum wells (x~0.3) grown on GaAs using AlGaSb interface misfit buffer

    Hayton, J. P., Marshall, A. R. J., Thompson, M. D. & Krier, A., 19/05/2015, In: AIMS Materials Science. 2, 2, p. 86-96 11 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  7. Electrical properties of GaSb/InAsSb core/shell nanowires

    Ganjipour, B., Sepehri, S., Dey, A. W., Tizno, O., Borg, B. M., Dick, K. A., Samuelson, L., Wernersson, L-E. & Thelander, C., 29/09/2014, In: Nanotechnology. 25, 42, 9 p., 425201.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  8. Hydrogenation of GaSb/GaAs quantum rings

    Hodgson, P., Hayne, M., Ahmad Kamarudin, M., Zhuang, Q., Birindelli, S. & Capizzi, M., 28/08/2014, In: Applied Physics Letters. 105, 5 p., 081907.

    Research output: Contribution to Journal/Magazine › Journal article

  9. Coulomb binding of electrons to multiply charged GaSb/GaAs self-assembled quantum dots

    Hayne, M., Maes, J., Bersier, S., Schliwa, A., Muller-Kirsch, L., Kapteyn, C., Heitz, R., Bimberg, D. & Moshchalkov, V. V., 03/2004, In: Physica E: Low-dimensional Systems and Nanostructures. 21, 2-4, p. 189-192 4 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review