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Results for metal oxide semiconductors

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  1. Air-Stable Solution-Processed Hybrid Transistors with Hole and Electron Mobilities Exceeding 2 cm(2) V-1 s(-1)

    Smith, J., Bashir, A., Adamopoulos, G., Anthony, J. E., Bradley, D. D. C., Hamilton, R., Heeney, M., McCulloch, I. & Anthopoulos, T. D., 24/08/2010, In: Advanced Materials. 22, 32, p. 3598-3602 5 p.

    Research output: Contribution to Journal/MagazineJournal articlepeer-review