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Dr Andrew Marshall

Senior Lecturer

  1. 2019
  2. Published

    Mid-infrared Light Emitting Diodes

    Krier, A., Repiso Menendez, E., Al-Saymari, F., Carrington, P., Marshall, A., Lu, Q., Krier, S., Lulla Ramrakhiyani, K., Steer, M., MacGregor, C., Broderick, C., Arkani, R., O'Reilly, E., Sorel, M., Molina, S. & de la Mata, M., 18/10/2019, Mid-infrared Optoelectronics Materials, Devices, and Applications. Tournié, E. & Cerutti, L. (eds.). Elsevier

    Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSNChapter

  3. Published

    Optical properties of metamorphic type-I InAs1-xSbx/AlyIn1-yAs quantum wells grown on GaAs for the mid-infrared spectral range

    Repiso Menendez, E., Broderick, C., de la Mata, M., Arkani, R., Lu, Q., Marshall, A., Molina, S., O'Reilly, E., Carrington, P. & Krier, A., 30/08/2019, In : Journal of Physics D: Applied Physics. 52, 10 p., 465102.

    Research output: Contribution to journalJournal article

  4. Published

    Resonant cavity-enhanced photodetector incorporating a type-II superlattice to extend MWIR sensitivity

    Letka, V., Bainbridge, A., Craig, A., Al-Saymari, F. & Marshall, A., 19/08/2019, In : Optics Express. 27, 17, p. 23970-23980 11 p.

    Research output: Contribution to journalJournal article

  5. Published

    Room-temperature Operation of Low-voltage, Non-volatile, Compound-semiconductor Memory Cells

    Tizno, O., Marshall, A., Fernández-Delgado, N., Herrera, M., Molina, S. I. & Hayne, M., 20/06/2019, In : Scientific Reports. 9, 8 p., 8950.

    Research output: Contribution to journalJournal article

  6. Published

    Heteroepitaxial Integration of Mid-Infrared InAsSb Light Emitting Diodes on Silicon

    Delli, E., Hodgson, P. D., Repiso Menendez, E., Craig, A. P., Hayton, J., Lu, Q., Marshall, A. R. J., Krier, A. & Carrington, P. J., 1/06/2019, In : IEEE Photonics Journal. 11, 3, 8 p., 2200608.

    Research output: Contribution to journalJournal article

  7. Published

    Metamorphic Integration of GaInAsSb Material on GaAs Substrates for Light Emitting Device Applications

    Lu, Q., Marshall, A. & Krier, A., 29/05/2019, In : Materials. 12, 11, 8 p., 1743.

    Research output: Contribution to journalJournal article

  8. Published

    Electroluminescence enhancement in mid-infrared InAsSb resonant cavity light emitting diodes for CO 2 detection

    Al-Saymari, F. A., Craig, A. P., Noori, Y. J., Lu, Q., Marshall, A. R. J. & Krier, A., 1/05/2019, In : Applied Physics Letters. 114, 17, 4 p., 171103.

    Research output: Contribution to journalJournal article

  9. Published

    Resonant cavity enhanced photodiodes on GaSb for the mid-wave infrared

    Craig, A. P., Al-Saymari, F., Jain, M., Bainbridge, A., Savich, G. R., Golding, T., Krier, A., Wicks, G. W. & Marshall, A. R., 15/04/2019, In : Applied Physics Letters. 114, 15, 5 p., 151107.

    Research output: Contribution to journalJournal article

  10. Published

    Low bandgap GaInAsSb thermophotovoltaic cells on GaAs substrate with advanced metamorphic buffer layer

    Lu, Q., Montesdeoca Cardenes, D., Carrington, P. J., Marshall, A. R. J., Krier, A. & Beanland, R., 1/03/2019, In : Solar Energy Materials and Solar Cells. 191, p. 406-412 7 p.

    Research output: Contribution to journalJournal article

  11. Published

    Mid-Infrared InAs/InAsSb Superlattice nBn Photodetector Monolithically Integrated onto Silicon

    Delli, E., Letka, V., Hodgson, P. D., Repiso Menendez, E., Hayton, J., Craig, A. P., Lu, Q., Beanland, R., Krier, A., Marshall, A. R. J. & Carrington, P. J., 28/02/2019, In : ACS Photonics. 6, 2, p. 538–544 7 p.

    Research output: Contribution to journalJournal article

  12. Published

    Extended short-wave infrared linear and Geiger mode avalanche photodiodes, based on 6.1 angstrom materials

    Craig, A. P., Jain, M., Meriggi, L., Cann, T., Niblett, A., Collins, X. & Marshall, A. R. J., 4/02/2019, In : Applied Physics Letters. 114, 5, 5 p., 053501.

    Research output: Contribution to journalJournal article

  13. Published

    Hole capture and emission dynamics of type-II GaSb/GaAs quantum ring solar cells

    Wagener, M. C., Montesdeoca Cardenes, D., Lu, Q., Marshall, A. R. J., Krier, A., Botha, J. R. & Carrington, P. J., 01/2019, In : Solar Energy Materials and Solar Cells. 189, p. 233-238 6 p.

    Research output: Contribution to journalJournal article

  14. 2018
  15. Published

    Electroluminescence and photoluminescence of type-II InAs/InAsSb strained-layer superlattices in the mid-infrared

    Keen, J., Repiso Menendez, E., Lu, Q., Kesaria, M., Marshall, A. R. J. & Krier, A., 09/2018, In : Infrared Physics and Technology. 93, p. 375-380 6 p.

    Research output: Contribution to journalJournal article

  16. Published

    InAs thermophotovoltaic cells with high quantum efficiency for waste heat recovery applications below 1000°C

    Lu, Q., Zhou, X., Krysa, A., Marshall, A., Carrington, P., Tan, C-H. & Krier, A., 1/06/2018, In : Solar Energy Materials and Solar Cells. 179, p. 334-338 5 p.

    Research output: Contribution to journalJournal article

  17. Published

    Coupling in type II GaSb/GaAs quantum ring solar cells

    Montesdeoca Cardenes, D., Hodgson, P. D., De La Mata, M., Marshall, A. R. J., Molina, S. I., Carrington, P. J. & Krier, A., 14/05/2018.

    Research output: Contribution to conference - Without ISBN/ISSN Conference paper

  18. Published

    Transport of modulation-doped Al0.2Ga0.8Sb/GaSb heterojunctions

    Hanks, L., Hayne, M., Marshall, A. R. J. & Ponomarenko, L. A., 2/03/2018, In : Journal of Physics: Conference Series. 964, 5 p., 012006.

    Research output: Contribution to journalJournal article

  19. Published

    InAs/InAsSb type-II strained-layer superlattices for mid-infrared LEDs

    Keen, J., Lane, D., Kesaria, M., Marshall, A. R. J. & Krier, A., 30/01/2018, In : Journal of Physics D: Applied Physics. 51, 7, 9 p., 075103.

    Research output: Contribution to journalJournal article

  20. Published

    Room temperature mid-infrared emission from faceted InAsSb multi quantum wells embedded in InAs nanowires

    Alhodaib, A., Noori, Y., Carrington, P. J., Sanchez, A., Thompson, M. D., Young, R. J., Krier, A. & Marshall, A. R. J., 10/01/2018, In : Nano Letters. 18, 1, p. 235-240 6 p.

    Research output: Contribution to journalJournal article

  21. Published

    Impact ionisation in Al0.9Ga0.1As0.08Sb0.92 for Sb-based avalanche photodiodes

    Collins, X., Craig, A. P., Roblin, T. & Marshall, A. R. J., 01/2018, In : Applied Physics Letters. 112, 2, 4 p., 021103.

    Research output: Contribution to journalJournal article

  22. 2017
  23. Published

    Antimony based mid-infrared semiconductor materials and devices monolithically grown on silicon substrates

    Carrington, P. J., Delli, E., Hodgson, P. D., Repiso, E., Craig, A., Marshall, A. & Krier, A., 20/11/2017, 30th Annual Conference of the IEEE Photonics Society, IPC 2017. Institute of Electrical and Electronics Engineers Inc., p. 307-308 2 p.

    Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSNConference contribution/Paper

  24. Published

    Modelling and measurement of bandgap behaviour in medium-wavelength IR InAs/InAs0.815Sb0.185 strained-layer superlattices

    Letka, V., Keen, J., Craig, A. & Marshall, A. R. J., 6/10/2017, In : Proceedings of SPIE - The International Society for Optical Engineering. 10433, 7 p., 1043319.

    Research output: Contribution to journalJournal article

  25. Published

    Suppression of the surface “dead region” for fabrication of GaInAsSb thermophotovoltaic cells

    Tang, L., Xu, C., Liu, Z., Lu, Q., Marshall, A. & Krier, A., 04/2017, In : Solar Energy Materials and Solar Cells. 163, p. 263-269 7 p.

    Research output: Contribution to journalJournal article

  26. 2016
  27. Published

    Type II GaSb/GaAs quantum rings with extended photoresponse for efficient solar cells

    Carrington, P. J., Montesdeoca Cardenes, D., Fujita, H., James Asirvatham, J. S., Wagener, M., Botha, J. R., Marshall, A. R. J. & Krier, A., 23/09/2016, In : Proceedings of SPIE. 9937, 7 p., 993708.

    Research output: Contribution to journalJournal article

  28. Published

    InSb-based quantum dot nanostructures for mid-infrared photonic devices

    Carrington, P. J., Repiso Menendez, E., Lu, Q., Fujita, H., Marshall, A. R. J., Zhuang, Q. & Krier, A., 16/09/2016, In : Proceedings of SPIE. 9919, 99190C.

    Research output: Contribution to journalJournal article

  29. Published

    Low bandgap InAs-based thermophotovoltaic cells for heat-electricity conversion

    Krier, A., Yin, M., Marshall, A. R. J. & Krier, S. E., 06/2016, In : Journal of Electronic Materials. 45, 6, p. 2826-2830 5 p.

    Research output: Contribution to journalJournal article

  30. Published

    Characterization of 6.1 Å III-V materials grown on GaAs and Si: a comparison of GaSb/GaAs epitaxy and GaSb/AlSb/Si epitaxy

    Craig, A., Carrington, P. J., Liu, H. & Marshall, A. R. J., 1/02/2016, In : Journal of Crystal Growth. 435, p. 56-61 6 p.

    Research output: Contribution to journalJournal article

  31. Published

    Low leakage-current InAsSb nanowire photodetectors on silicon

    Thompson, M. D., Alhodaib, A., Craig, A. P., Robson, A. J., Aziz, A., Krier, A., Svensson, J., Wernersson, L., Sanchez, A. M. & Marshall, A. R. J., 13/01/2016, In : Nano Letters. 16, 1, p. 182-187 6 p.

    Research output: Contribution to journalJournal article

  32. 2015
  33. Published

    Open-circuit voltage recovery in type II GaSb/GaAs quantum ring solar cells under high concentration

    Fujita, H., Carrington, P. J., Wagener, M. C., Botha, J. R., Marshall, A. R. J., James, J., Krier, A., Lee, K-H. & Ekins-Daukes, N. J., 12/2015, In : Progress in Photovoltaics: Research and Applications. 23, 12, p. 1896-1900 5 p.

    Research output: Contribution to journalJournal article

  34. Published

    Low bandgap mid-infrared thermophotovoltaic arrays based on InAs

    Krier, A., Yin, M., Marshall, A., Kesaria, M., Krier, S., McDougall, S., Meredith, W., Johnson, A. D., Inskip, J. & Scholes, A., 11/2015, In : Infrared Physics and Technology. 73, p. 126-129 4 p.

    Research output: Contribution to journalJournal article

  35. Published

    InAsSb-based nBn photodetectors: lattice mismatched growth on GaAs and low-frequency noise performance

    Craig, A., Thompson, M., Tian, Z-B., Krishna, S., Krier, A. & Marshall, A., 24/08/2015, In : Semiconductor Science and Technology. 30, 10, 7 p., 105011.

    Research output: Contribution to journalJournal article

  36. Published

    Extended wavelength mid-infrared photoluminescence from type-I InAsN and InGaAsN dilute nitride quantum wells grown on InP

    Wheatley, R., Kesaria, M., Mwast, L. J., Kirch, J. D., Kuech, T. F., Marshall, A., Zhuang, Q. & Krier, A., 10/06/2015, In : Applied Physics Letters. 106, 4 p., 232105.

    Research output: Contribution to journalJournal article

  37. Published

    Short-wave infrared barriode detectors using InGaAsSb absorption material lattice matched to GaSb

    Craig, A., Jain, M., Wicks, G., Golding, T., Hossain, K., McEwan, K., Howle, C., Percy, B. & Marshall, A., 20/05/2015, In : Applied Physics Letters. 106, 20, 5 p., 201103.

    Research output: Contribution to journalJournal article

  38. Published

    Characterisation of Ga(1-x)In(x)Sb quantum wells (x~0.3) grown on GaAs using AlGaSb interface misfit buffer

    Hayton, J. P., Marshall, A. R. J., Thompson, M. D. & Krier, A., 19/05/2015, In : AIMS Materials Science. 2, 2, p. 86-96 11 p.

    Research output: Contribution to journalJournal article

  39. Published

    GaAs and AlGaAs APDs with GaSb absorption regions in a separate absorption and multiplication structure using a hetero-lattice interface

    Marshall, A., Craig, A., Reyner, C. J. & Huffaker, D. L., 05/2015, In : Infrared Physics and Technology. 70, p. 168-170 3 p.

    Research output: Contribution to journalJournal article

  40. Published

    Reprint of "mid-infrared InAsSb-based nBn photodetectors with AlGaAsSb barrier layers - Grown on GaAs, using an interfacial misfit array, and on native GaSb"

    Craig, A., Marshall, A. R. J., Tian, Z-B. & Krishna, S., 05/2015, In : Infrared Physics and Technology. 70, p. 107-110 4 p.

    Research output: Contribution to journalJournal article

  41. Published

    Delta doping and positioning effects of type II GaSb quantum dots in GaAs solar cell

    James Asirvatham, J. S., Fujita, H., Fernández-Delgado, N., Herrera, M., Molina, S. I., Marshall, A. R. J. & Krier, A., 2015, In : Materials Research Innovations. 19, 7, p. 512-516 5 p.

    Research output: Contribution to journalJournal article

  42. 2014
  43. Published

    Mid-infrared InAsSb-based nBn photodetectors with AlGaAsSb barrier layers – Grown on GaAs, using an interfacial misfit array, and on native GaSb

    Craig, A., Marshall, A., Tian, Z-B. & Krishna, S., 11/2014, In : Infrared Physics and Technology. 67, p. 210-213 4 p.

    Research output: Contribution to journalJournal article

  44. Published

    Excess noise in GaAs and AlGaAs avalanche photodiodes with GaSb absorption regions—composite structures grown using interfacial misfit arrays

    Craig, A., Reyner, C. J., Marshall, A. & Huffaker, D. L., 28/05/2014, In : Applied Physics Letters. 104, 4 p., 213502.

    Research output: Contribution to journalJournal article

  45. Published

    InSb quantum dots for the mid-infrared spectral range grown on GaAs substrates using metamorphic InAs buffer layers

    Lu, Q., Zhuang, Q., Marshall, A., Kesaria, M., Beanland, R. & Krier, A., 12/05/2014, In : Semiconductor Science and Technology. 29, 7, 8 p., 075011 .

    Research output: Contribution to journalJournal article

  46. Published

    Carrier extraction from GaSb quantum rings in GaAs solar cells using direct laser excitation

    James Asirvatham, J., Fujita, H., Carrington, P., Marshall, A. & Krier, A., 04/2014, In : IET Optoelectronics. 8, 2, p. 76-80 5 p.

    Research output: Contribution to journalJournal article

  47. Published

    Carrier extraction behaviour in type II GaSb/GaAs quantum ring solar cells

    Fujita, H., James Asirvatham, J., Carrington, P., Marshall, A., Krier, A., Wagener, M. C. & Botha, J. R., 03/2014, In : Semiconductor Science and Technology. 29, 3, 5 p., 035014.

    Research output: Contribution to journalJournal article

  48. 2013
  49. Published

    Mid-infrared InAs0.79Sb0.21-based nBn photodetectors with Al0.9Ga0.2As0.1Sb0.9 barrier layers, and comparisons with InAs0.87Sb0.13 p-i-n diodes, both grown on GaAs using interfacial misfit arrays

    Craig, A., Marshall, A., Tian, Z-B., Krishna, S. & Krier, A., 16/12/2013, In : Applied Physics Letters. 103, 4 p., 253502.

    Research output: Contribution to journalJournal article

  50. 2012
  51. Published

    Impact Ionization Coefficients in 4H-SiC by Ultralow Excess Noise Measurement

    Green, J. E., Loh, W. S., Marshall, A. R. J., Ng, B. K., Tozer, R. C., David, J. P. R., Soloviev, S. I. & Sandvik, P. M., 04/2012, In : IEEE Transactions on Electron Devices. 59, 4, p. 1030-1036 7 p.

    Research output: Contribution to journalJournal article

  52. Published

    Short-Wave Infrared GaInAsSb Photodiodes Grown on GaAs Substrate by Interfacial Misfit Array Technique

    Nunna, K. C., Tan, S. L., Reyner, C. J., Marshall, A. R. J., Liang, B., Jallipalli, A., David, J. P. R. & Huffaker, D. L., 1/02/2012, In : IEEE Photonics Technology Letters. 24, 3, p. 218-220 3 p.

    Research output: Contribution to journalJournal article

  53. Published

    Low noise high responsivity InAs electron avalanche photodiodes for infrared sensing

    Ker, P. J., Marshall, A. R. J., David, J. P. R. & Tan, C. H., 02/2012, In : Physica Status Solidi C. 9, 2, p. 310-313 4 p.

    Research output: Contribution to journalJournal article

  54. 2011
  55. Published

    High speed InAs electron avalanche photodiodes overcome the conventional gain-bandwidth product limit

    Marshall, A. R. J., Ker, P. J., Krysa, A., David, J. P. R. & Tan, C. H., 7/11/2011, In : Optics Express. 19, 23, p. 23341-23349 9 p.

    Research output: Contribution to journalJournal article

  56. Published

    Temperature Dependence of Leakage Current in InAs Avalanche Photodiodes

    Ker, P. J., Marshall, A. R. J., Krysa, A. B., David, J. P. R. & Tan, C. H., 08/2011, In : IEEE Journal of Quantum Electronics. 47, 8, p. 1123-1128 6 p.

    Research output: Contribution to journalJournal article

  57. Published

    Avalanche Multiplication and Excess Noise in InAs Electron Avalanche Photodiodes at 77 K

    Marshall, A. R. J., Vines, P., Ker, P. J., David, J. P. R. & Tan, C. H., 06/2011, In : IEEE Journal of Quantum Electronics. 47, 6, p. 858-864 7 p.

    Research output: Contribution to journalJournal article

  58. Published

    The InAs electron avalanche photodiode

    Marshall, A., 22/03/2011, Advances in photodiodes. Dalla Betta, G. F. (ed.). InTech, p. 447-466 20 p.

    Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSNChapter

  59. 2010
  60. Published

    Impact Ionization in InAs Electron Avalanche Photodiodes

    Marshall, A. R. J., David, J. P. R. & Tan, C. H., 10/2010, In : IEEE Transactions on Electron Devices. 57, 10, p. 2631-2638 8 p.

    Research output: Contribution to journalJournal article

  61. Published

    High gain InAs electron-avalanche photodiodes for optical communication

    Marshall, A. R. J., Vines, P., Xie, S., David, J. P. R. & Tan, C. H., 2010, 2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM). New York: IEEE, p. - 4 p.

    Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSNConference contribution/Paper

  62. 2009
  63. Published

    Extremely Low Excess Noise in InAs Electron Avalanche Photodiodes

    Marshall, A. R. J., Tan, C. H., Steer, M. J. & David, J. P. R., 1/07/2009, In : IEEE Photonics Technology Letters. 21, 13, p. 866-868 3 p.

    Research output: Contribution to journalJournal article

  64. 2008
  65. Published

    Electron dominated impact ionization and avalanche gain characteristics in InAs photodiodes

    Marshall, A. R. J., Tan, C. H., Steer, M. J. & David, J. P. R., 15/09/2008, In : Applied Physics Letters. 93, 11, p. - 3 p., 111107.

    Research output: Contribution to journalJournal article

  66. Published

    Modeling of avalanche multiplication and excess noise factor in In0.52Al0.48As avalanche photodiodes using a simple Monte Carlo model

    Mun, S. C. L. T., Tan, C. H., Goh, Y. L., Marshall, A. R. J. & David, J. P. R., 1/07/2008, In : Journal of Applied Physics. 104, 1, p. - 6 p., 013114.

    Research output: Contribution to journalJournal article

  67. Published

    Design considerations for In0.52Al0.48As based avalanche photodiodes

    Mun, S. C. L. T., Tan, C. H., Marshall, A. R. J., Goh, Y. L., Tan, L. J. J. & David, J. P. R., 2008, 20th International Conference on Indium Phosphide and Related Materials, 2008. IPRM 2008. . New York: IEEE, p. 331-333 3 p.

    Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSNConference contribution/Paper

  68. 2007
  69. Published

    Fabrication of InAs Photodiodes with reduced surface leakage current - art. no. 67400H

    Marshall, A. R. J., Tan, C. H., David, J. P. R., Ng, J. S. & Hopkinson, M., 10/2007, Optical Materials in Defence Systems Technology IV. Grote, J. G., Kajzar, F. & Lindgren, M. (eds.). Bellingham, Wash.: SPIE-INT SOC OPTICAL ENGINEERING

    Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSNConference contribution/Paper

  70. Published

    Avalanche multiplication in InAlAs

    Goh, Y. L., Massey, D. J., Marshall, A. R. J., Ng, J. S., Tan, C. H., Ng, W. K., Rees, G. J., Hopkinson, A., David, J. P. R. & Jones, S. K., 01/2007, In : IEEE Transactions on Electron Devices. 54, 1, p. 11-16 6 p.

    Research output: Contribution to journalJournal article

  71. Published

    Excess avalanche noise in In0.52Al0.48As

    Goh, Y. L., Marshall, A. R. J., Massey, D. J., Ng, J. S., Tan, C. H., Hopkinson, M., David, J. P. R., Jones, S. K., Button, C. C. & Pinches, S. M., 2007, In : IEEE Journal of Quantum Electronics. 43, 5-6, p. 503-507 5 p.

    Research output: Contribution to journalJournal article

  72. Published

    Extremely low excess noise InAlAs avalanche photodiodes

    Tan, C. H., Goh, Y. L., Marshall, A. R. J., Tan, L. J. J., Ng, J. S. & David, J. P. R., 2007, 2007 International Conference on Indium Phosphide and Related Materials, Conference Proceedings. New York: IEEE, p. 81-83 3 p.

    Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSNConference contribution/Paper

  73. 2006
  74. Published

    A comparison of the lower limit of multiplication noise in InP and InAlAs based APDs for telecommunications receiver applications.

    Marshall, A. R. J., Goh, Y. L., Tan, L. J. J., Tan, C. H., Ng, J. S. & David, J. P. R., 2006, 2006 IEEE LEOS Annual Meeting Conference Proceedings, Vols 1 and 2. New York: IEEE, p. 789-790 2 p.

    Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSNConference contribution/Paper

  75. Published

    Excess noise and avalanche multiplication in InAlAs

    Goh, Y. L., Massey, D. J., Marshall, A. R. J., Ng, J. S., Tan, C. H., Hopkinson, M. & David, J. P. R., 2006, 2006 IEEE LEOS Annual Meeting Conference Proceedings, Vols 1 and 2. New York: IEEE, p. 787-788 2 p.

    Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSNConference contribution/Paper

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