Home > Research > Researchers > Professor Anthony Krier > Publications

Professor Anthony Krier

Professor

  1. Published

    ZnO-based thin film transistors employing aluminum titanate gate dielectrics deposited by spray pyrolysis at ambient air

    Afouxenidis, D., Mazzocco, R., Vourlias, G., Livesley, P., Krier, A., Milne, W. I., Kolosov, O. & Adamopoulos, G., 8/04/2015, In : ACS Applied Materials and Interfaces. 7, 13, p. 7334-7341 8 p.

    Research output: Contribution to journalJournal article

  2. Published

    High-mobility Gallium Indium Zinc Oxide-based thin film transistors grown by Spray Pyrolysis in Air

    Afouxenidis, D., Kolosov, O., Vourlias, G., Krier, A., Milne, W. I. & Adamopoulos, G., 2015.

    Research output: Contribution to conference - Without ISBN/ISSN Poster

  3. Published

    Room temperature mid-infrared emission from faceted InAsSb multi quantum wells embedded in InAs nanowires

    Alhodaib, A., Noori, Y., Carrington, P. J., Sanchez, A., Thompson, M. D., Young, R. J., Krier, A. & Marshall, A. R. J., 10/01/2018, In : Nano Letters. 18, 1, p. 235-240 6 p.

    Research output: Contribution to journalJournal article

  4. Published

    Electroluminescence enhancement in mid-infrared InAsSb resonant cavity light emitting diodes for CO 2 detection

    Al-Saymari, F. A., Craig, A. P., Noori, Y. J., Lu, Q., Marshall, A. R. J. & Krier, A., 1/05/2019, In : Applied Physics Letters. 114, 17, 4 p., 171103.

    Research output: Contribution to journalJournal article

  5. Published

    The structural evolution of InN nanorods to microstructures on Si (111) by molecular beam epitaxy

    Anyebe, E., Zhuang, Q., Kesaria, M. & Krier, A., 08/2014, In : Semiconductor Science and Technology. 29, 8, 7 p., 085010.

    Research output: Contribution to journalJournal article

  6. Published

    Nanoindentation studies of MOVPE grown GaAs/InP heterostructures. .

    Arivuoli, D., Lawson, N. S., Krier, A., Attolini, G. & Pelosi, C., 16/10/2000, In : Materials Chemistry and Physics. 66, 2 - 3, p. 207-212 6 p.

    Research output: Contribution to journalJournal article

  7. Published

    Physical working principles of semiconductor disk lasers. .

    Averkiev, N. S., Sherstnev, V. V., Monakhov, A. M., Grebenshikova, E. A., Kislyakova, A. Y., Yakovlev, Y. P., Krier, A. & Wright, D. A., 02/2007, In : Low Temperature Physics. 33, 2-3, p. 283-290 8 p.

    Research output: Contribution to journalJournal article

  8. Published

    Low-voltage ZnO thin-film transistors employing Nd2O3 high-k dielectrics deposited by spray pyrolysis in air

    Bin Esro, M., Kolosov, O., Vourlias, G., Krier, A., Milne, W. I. & Adamopoulos, G., 2015.

    Research output: Contribution to conference - Without ISBN/ISSN Poster

  9. Published

    Solution processed a-LaAlO3 gate dielectrics for their applications in thin film transistors employing metal oxide semiconducting channels

    Bin Esro, M., Mazzocco, R., Vourlias, G., Krier, A., Milne, W. I., Kolosov, O. & Adamopoulos, G., 2015.

    Research output: Contribution to conference - Without ISBN/ISSN Poster

  10. Published

    Solution processed SnO2:Sb transparent conductive oxide as alternative to Indium Tin Oxide for applications in Organic Light Emitting Diodes

    Bin Esro, M., Georgakopoulos, S., Lu, H., Vourlias, G., Krier, A., Milne, W. I., Gillin, W. P. & Adamopoulos, G., 28/04/2016, In : Journal of Materials Chemistry C. 4, 16, p. 3563-3570 8 p.

    Research output: Contribution to journalJournal article

  11. Published

    Peculiarities of the hydrogenated In(AsN) alloy

    Birindelli, S., Kesaria, M., Giubertoni, D., Pettinari, G., Velichko, A. V., Zhuang, Q., Krier, A., Patane, A., Polimeni, A. & Capizzi, M., 14/09/2015, In : Semiconductor Science and Technology. 30, p. 105030 10 p.

    Research output: Contribution to journalJournal article

  12. Published

    Room temperature midinfrared electroluminescence from InSb/InAs quantum dot light emitting diodes.

    Carrington, P. J., Solov'ev, V. A., Zhuang, Q., Krier, A. & Ivanov, S. V., 1/09/2008, In : Applied Physics Letters. 93, 9, p. 091101

    Research output: Contribution to journalJournal article

  13. Published

    Temperature dependence of mid-infrared electroluminescence in type II InAsSb/InAs multi-quantum well light-emitting diodes.

    Carrington, P. J., Zhuang, Q., Yin, M. & Krier, A., 07/2009, In : Semiconductor Science and Technology. 24, 7, p. 075001

    Research output: Contribution to journalJournal article

  14. Published

    Type II InSb/InAs quantum dot structures grown by molecular beam epitaxy using Sb-2 and As-2 fluxes

    Carrington, P., Solov'ev, V. A., Zhuang, Q., Ivanov, S. V. & Krier, A., 1/02/2008, In : Proceedings of SPIE. 6900, 69000I.

    Research output: Contribution to journalJournal article

  15. Published

    Midinfrared InAsSbN/InAs Multiquantum Well Light-Emitting Diodes

    Carrington, P., de la Mare, M., Cheetham, K. J., Zhuang, Q. & Krier, A., 2011, In : Advances in OptoElectronics. 2011, n/a, 8 p., 145012.

    Research output: Contribution to journalJournal article

  16. Published

    Type II GaSb/GaAs quantum dot/ring stacks with extended photoresponse for efficient solar cells

    Carrington, P. J., Mahajumi, A. S., Wagener, M. C., Botha, J. R., Zhuang, Q. & Krier, A., 15/05/2012, In : Physica B: Condensed Matter. 407, 10, p. 1493-1496 4 p.

    Research output: Contribution to journalJournal article

  17. Published

    InSb quantum dot LEDs grown by molecular beam epitaxy for mid-infrared applications

    Carrington, P. J., Solov'ev, V. A., Zhuang, Q., Vanov, S. V. & Krier, A., 03/2009, In : Microelectronics Journal. 40, 3, p. 469-472 4 p.

    Research output: Contribution to journalJournal article

  18. Published

    Enhanced infrared photo-response from GaSb/GaAs quantum ring solar cells

    Carrington, P. J., Wagener, M. C., Botha, J. R., Sanchez, A. M. & Krier, A., 3/12/2012, In : Applied Physics Letters. 101, 23, 5 p., 231101.

    Research output: Contribution to journalJournal article

  19. Published

    Long-Wavelength Photoluminescence from Stacked Layers of High-Quality Type-II GaSb/GaAs Quantum Rings

    Carrington, P. J., Young, R. J., Hodgson, P. D., Sanchez, A. M., Hayne, M. & Krier, A., 03/2013, In : Crystal Growth and Design. 13, 3, p. 1226-1230 5 p.

    Research output: Contribution to journalJournal article

  20. Published

    Type II GaSb/GaAs quantum rings with extended photoresponse for efficient solar cells

    Carrington, P. J., Montesdeoca Cardenes, D., Fujita, H., James Asirvatham, J. S., Wagener, M., Botha, J. R., Marshall, A. R. J. & Krier, A., 23/09/2016, In : Proceedings of SPIE. 9937, 7 p., 993708.

    Research output: Contribution to journalJournal article

  21. Published

    InSb-based quantum dot nanostructures for mid-infrared photonic devices

    Carrington, P. J., Repiso Menendez, E., Lu, Q., Fujita, H., Marshall, A. R. J., Zhuang, Q. & Krier, A., 16/09/2016, In : Proceedings of SPIE. 9919, 99190C.

    Research output: Contribution to journalJournal article

  22. Published

    Antimony based mid-infrared semiconductor materials and devices monolithically grown on silicon substrates

    Carrington, P. J., Delli, E., Hodgson, P. D., Repiso, E., Craig, A., Marshall, A. & Krier, A., 20/11/2017, 30th Annual Conference of the IEEE Photonics Society, IPC 2017. Institute of Electrical and Electronics Engineers Inc., p. 307-308 2 p.

    Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSNConference contribution/Paper

  23. Published

    Fabrication and characterization of an InAs0.96Sb0.04 photodetector for MIR applications. .

    Chakrabarti, P., Krier, A., Huang, X. L. & Fenge, P., 5/05/2004, In : IEEE Electron Device Letters. 25, 5, p. 283-285 3 p.

    Research output: Contribution to journalJournal article

  24. Published

    Analysis and simulation of a mid-infrared P+-InAs0.55Sb0.15P0.30/n(0)-InAs0.89Sb0.11/N+-InAs0.55Sb0.15P0.30 double heterojunction photodetector grown by LPE. .

    Chakrabarti, P., Krier, A. & Morgan, A. F., 1/10/2003, In : IEEE Transactions on Electron Devices. 50, 10, p. 2049-2058 10 p.

    Research output: Contribution to journalJournal article

  25. Published

    Double-heterojunction photodetector for midinfrared applications: theoretical model and experimental results.

    Chakrabarti, P., Krier, A. & Morgan, A. F., 1/09/2003, In : Optical Engineering. 42, 9, p. 2614-2623 10 p.

    Research output: Contribution to journalJournal article

  26. Published

    Optical and electrical characterisation of an p(+)-InAs0.96Sb0.04/n(0)-InAs0.96Sb0.04/n(+)-InAs photodetector for mid-infrared application

    Chakrabarti, P., Krier, A., Huang, X. L., Fenge, P. & Lal, R. K., 2003, PROCEEDINGS OF THE INTERNATIONAL 2003 SBMO/IEEE MTT-S INTERNATIONAL MICROWAVE AND OPTOELECTRONICS CONFERENCE - IMOC 2003, VOLS I AND II. Kalinowski, HJ., Romero, MA. & Barbin, SE. (eds.). NEW YORK: IEEE, p. 87-92 6 p.

    Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSNConference contribution/Paper

  27. Published

    General theory of multi-phase melt crystallization. .

    Charykov, N. A., Sherstnev, V. V. & Krier, A., 02/2002, In : Journal of Crystal Growth. 234, 4, p. 762-772 11 p.

    Research output: Contribution to journalJournal article

  28. Published

    Raman scattering in InAsxSbyP1-x-y alloys grown by gas source MBE.

    Cheetham, K. J., Krier, A., Patel, I. I., Martin, F. L., Tzeng, J-S., Wu, C-J., Lin, H-H. & EPSRC Studentship for KJC (Funder), 2/03/2011, In : Journal of Physics D: Applied Physics. 44, 8, p. 085405

    Research output: Contribution to journalJournal article

  29. Published

    Raman spectroscopy of pentanary GaInAsSbP narrow gap alloys lattice matched to InAs and GaSb

    Cheetham, K. J., Carrington, P. J., Krier, A., Patel, I. I. & Martin, F. L., 01/2012, In : Semiconductor Science and Technology. 27, 1, p. - 4 p., 015004.

    Research output: Contribution to journalJournal article

  30. Published

    Direct evidence for suppression of Auger recombination in GaInAsSbP/InAs mid-infrared light-emitting diodes

    Cheetham, K. J., Krier, A., Marko, I. P., Aldukhayel, A. & Sweeney, S. J., 3/10/2011, In : Applied Physics Letters. 99, 14, p. - 3 p., 141110.

    Research output: Contribution to journalJournal article

  31. Published

    Low bandgap GaInAsSbP pentanary thermophotovoltaic diodes

    Cheetham, K. J., Carrington, P. J., Cook, N. B. & Krier, A., 02/2011, In : Solar Energy Materials and Solar Cells. 95, 2, p. 534-537 4 p.

    Research output: Contribution to journalJournal article

  32. Published

    Photoluminescence properties of midinfrared dilute nitride InAsN epilayers with/without Sb flux during molecular beam epitaxial growth.

    Chen, R., Phann, S., Sun, H. D., Zhuang, Q., Godenir, A. M. R. & Krier, A., 28/12/2009, In : Applied Physics Letters. 95, 26, p. 261905

    Research output: Contribution to journalJournal article

  33. Published

    High-pressure measurements of mid-infrared electroluminescence from InAs light-emitting diodes at 3.3 mu m. .

    Choulis, S. A., Andreev, A., Merrick, M., Adams, A. R., Murdin, B. N., Krier, A. & Sherstnev, V. V., 24/02/2003, In : Applied Physics Letters. 82, 8, p. 1149-1151 3 p.

    Research output: Contribution to journalJournal article

  34. Published

    The effect of pressure on the radiative efficiency of InAs based light emitting diodes. .

    Choulis, S. A., Andreev, A., Merrick, M., Jin, S., Clarke, D. G., Murdin, B. N., Adams, A. R., Krier, A. & Sherstnev, V. V., 1/02/2003, In : physica status solidi (b). 235, 2, p. 312-316 5 p.

    Research output: Contribution to journalJournal article

  35. Published

    Midinfrared electroluminescence from pentanary-quaternary heterojunction light-emitting diodes.

    Cook, N. B. & Krier, A., 13/07/2009, In : Applied Physics Letters. 95, 2, p. 021110

    Research output: Contribution to journalJournal article

  36. Published

    Mid-infrared InAs0.79Sb0.21-based nBn photodetectors with Al0.9Ga0.2As0.1Sb0.9 barrier layers, and comparisons with InAs0.87Sb0.13 p-i-n diodes, both grown on GaAs using interfacial misfit arrays

    Craig, A., Marshall, A., Tian, Z-B., Krishna, S. & Krier, A., 16/12/2013, In : Applied Physics Letters. 103, 4 p., 253502.

    Research output: Contribution to journalJournal article

  37. Published

    InAsSb-based nBn photodetectors: lattice mismatched growth on GaAs and low-frequency noise performance

    Craig, A., Thompson, M., Tian, Z-B., Krishna, S., Krier, A. & Marshall, A., 24/08/2015, In : Semiconductor Science and Technology. 30, 10, 7 p., 105011.

    Research output: Contribution to journalJournal article

  38. Published

    Resonant cavity enhanced photodiodes on GaSb for the mid-wave infrared

    Craig, A. P., Al-Saymari, F., Jain, M., Bainbridge, A., Savich, G. R., Golding, T., Krier, A., Wicks, G. W. & Marshall, A. R., 15/04/2019, In : Applied Physics Letters. 114, 15, 5 p., 151107.

    Research output: Contribution to journalJournal article

  39. Published

    Determination of the fundamental and spin-orbit-splitting band gap energies of InAsSb-based ternary and pentenary alloys using mid-infrared photoreflectance

    Cripps, S. A., Hosea, T. J. C., Krier, A., Smirnov, V., Batty, P. J., Zhuang, Q. D., Lin, H. H., Liu, P. W. & Tsai, G., 30/09/2008, In : Thin Solid Films. 516, 22, p. 8049-8058 10 p.

    Research output: Contribution to journalJournal article

  40. Published

    Midinfrared photoreflectance study of InAs-rich InAsSb and GaInAsPSb indicating negligible bowing for the spin orbit splitting energy. .

    Cripps, S. A., Hosea, T. J. C., Krier, A., Smirnov, V., Batty, P. J., Zhuang, Q. D., Lin, H. H., Liu, P. W. & Tsai, G., 24/04/2007, In : Applied Physics Letters. 92, 17, p. 172106

    Research output: Contribution to journalJournal article

  41. Published

    Near infrared photoluminescence observed in dilute GaSbBi alloys grown by liquid phase epitaxy

    Das, S. K., Das, T. D., Dhar, S., de la Mare, M. & Krier, A., 01/2012, In : Infrared Physics and Technology. 55, 1, p. 156-160 5 p.

    Research output: Contribution to journalJournal article

  42. Published

    Growth and characterization of InAsN/GaAs dilute nitride semiconductor alloys for the midinfrared spectral range.

    de la Mare, M., Zhuang, Q., Krier, A., Patane, A. & Dhar, S., 22/07/2009, In : Applied Physics Letters. 95, 3, p. 031110

    Research output: Contribution to journalJournal article

  43. Published

    Photoluminescence of InAs0.926Sb0.063N0.011/InAs multi-quantum wells in the mid-infrared spectral range.

    de la Mare, M., Carrington, P. J., Wheatley, R., Zhuang, Q., Beanland, R., Sanchez, A. M., Krier, A. & EPSRC Studentship for MDLM (Funder), 1/09/2010, In : Journal of Physics D: Applied Physics. 43, 34, p. 345103

    Research output: Contribution to journalJournal article

  44. Published

    MBE growth and characterization of dilute nitrides for mid-infrared optoelectronic devices

    de la Mare, M., Krier, A., Zhuang, Q., Carrington, P. & Patane, A., 2011, In : Proceedings of SPIE. 7945, 79450L

    Research output: Contribution to journalJournal article

  45. Published

    N incorporation and photoluminescence in In-rich InGaAsN grown on InAs by liquid phase epitaxy

    de la Mare, M., Das, S. C., Das, T. D., Dhar, S. & Krier, A., 10/08/2011, In : Journal of Physics D: Applied Physics. 44, 31, p. - 7 p., 315102.

    Research output: Contribution to journalJournal article

  46. Published

    Effects of substrate pm M comtent on the growth of the mid-infrared dilute nitride InAsN alloy

    De La Mare, M., Zhuang, Q., Krier, A. & Patane, A., 3/10/2012, In : Journal of Physics D: Applied Physics. 45, 39, p. 395103-395105 3 p.

    Research output: Contribution to journalJournal article

  47. Published

    Mid-Infrared InAs/InAsSb Superlattice nBn Photodetector Monolithically Integrated onto Silicon

    Delli, E., Letka, V., Hodgson, P. D., Repiso Menendez, E., Hayton, J., Craig, A. P., Lu, Q., Beanland, R., Krier, A., Marshall, A. R. J. & Carrington, P. J., 28/02/2019, In : ACS Photonics. 6, 2, p. 538–544 7 p.

    Research output: Contribution to journalJournal article

  48. Published

    Heteroepitaxial Integration of Mid-Infrared InAsSb Light Emitting Diodes on Silicon

    Delli, E., Hodgson, P. D., Repiso Menendez, E., Craig, A. P., Hayton, J., Lu, Q., Marshall, A. R. J., Krier, A. & Carrington, P. J., 1/06/2019, In : IEEE Photonics Journal. 11, 3, 8 p., 2200608.

    Research output: Contribution to journalJournal article

  49. Published

    Properties of dilute InAsN layers grown by liquid phase epitaxy.

    Dhar, S., Das, T. D., de la Mare, M. & Krier, A., 22/08/2008, In : Applied Physics Letters. 93, 7, p. 071905

    Research output: Contribution to journalJournal article

  50. Published

    Resonant Zener tunnelling via zero-dimensional states in a narrow gap diode

    Di Paola, D. M., Kesaria, M., Makarovsky, O., Velichko, A. V., Eaves, L., Mori, N., Krier, A. & Patane, A., 18/08/2016, In : Scientific Reports. 6, 8 p., 32039.

    Research output: Contribution to journalJournal article

  51. Published

    Cyclotron resonance mass and Fermi energy pinning in the In(AsN) alloy.

    Drachenko, O., Patane, A., Kozlova, N. V., Zhuang, Q., Krier, A., Eaves, L., Helm, M., EU Contract No. RII3-CT-2004-506239 (Funder), DFG Grant Nos. DR832/3-1 (Funder), DFG KO 3743/1-1 (Funder) & AOBJ: 550341 (Funder), 04/2011, In : Applied Physics Letters. 98, 16, p. 162109

    Research output: Contribution to journalJournal article

  52. Published

    Effect of doping on the morphology of GaSb/GaAs nanostructures for solar cells

    Fernández-Delgado, N., Herrera, M., Molina, S. I., Castro, C., Duguay, S., James, J. S. & Krier, A., 30/12/2015, In : Applied Surface Science. 359, p. 676-678 3 p.

    Research output: Contribution to journalLetter

  53. Published

    Structural Quality of GaSb/GaAs Quantum Dots for Solar Cells Analyzed by Electron Microscopy Techniques

    Fernández-Delgado, N., Herrera, M., Baladés, N., James, J. S., Krier, A., Fujita, H. & Molina, S. I., 03/2016, In : Microscopy and Microanalysis. p. 38-39 2 p.

    Research output: Contribution to journalMeeting abstract

  54. Published

    Carrier extraction behaviour in type II GaSb/GaAs quantum ring solar cells

    Fujita, H., James Asirvatham, J., Carrington, P., Marshall, A., Krier, A., Wagener, M. C. & Botha, J. R., 03/2014, In : Semiconductor Science and Technology. 29, 3, 5 p., 035014.

    Research output: Contribution to journalJournal article

  55. Published

    Open-circuit voltage recovery in type II GaSb/GaAs quantum ring solar cells under high concentration

    Fujita, H., Carrington, P. J., Wagener, M. C., Botha, J. R., Marshall, A. R. J., James, J., Krier, A., Lee, K-H. & Ekins-Daukes, N. J., 12/2015, In : Progress in Photovoltaics: Research and Applications. 23, 12, p. 1896-1900 5 p.

    Research output: Contribution to journalJournal article

  56. Published

    Room-temperature InAs0.89Sb0.11 photodetectors for CO detection at 4.6 mu m. .

    Gao, H. H., Krier, A. & Sherstnev, V. V., 7/08/2000, In : Applied Physics Letters. 77, 6, p. 872-874 3 p.

    Research output: Contribution to journalJournal article

  57. Published

    InAsSb/lnAsSbP light emitting diodes for the detection of CO and CO2 at room temperature

    Gao, H. H., Krier, A., Sherstnev, V. & Yakovlev, Y., 7/08/1999, In : Journal of Physics D: Applied Physics. 32, 15, p. 1768-1772 5 p.

    Research output: Contribution to journalJournal article

  58. Published

    High quality InAs grown by liquid phase epitaxy using gadolinium gettering

    Gao, H. H., Krier, A. & Sherstnev, V. V., 05/1999, In : Semiconductor Science and Technology. 14, 5, p. 441-445 5 p.

    Research output: Contribution to journalJournal article

  59. Published

    Characterisation of InAs/GaAs quantum dots intermediate band photovoltaic devices

    Garduno-Nolasco, E., Carrington, P. J., Krier, A. & Missous, M., 04/2014, In : IET Optoelectronics. 8, 2, p. 71-75 5 p.

    Research output: Contribution to journalJournal article

  60. Published

    Characterisation of Ga(1-x)In(x)Sb quantum wells (x~0.3) grown on GaAs using AlGaSb interface misfit buffer

    Hayton, J. P., Marshall, A. R. J., Thompson, M. D. & Krier, A., 19/05/2015, In : AIMS Materials Science. 2, 2, p. 86-96 11 p.

    Research output: Contribution to journalJournal article

  61. Published

    Growth of self-assembled PbSe quantum-dots on GaSb(100) by liquid phase epitaxy. .

    Huang, X. L., Labadi, Z., Hammiche, A. & Krier, A., 7/12/2002, In : Journal of Physics D: Applied Physics. 35, 23, p. 3091-3095 5 p.

    Research output: Contribution to journalJournal article

  62. Published

    Structural and optical properties of dilute InAsN grown by molecular beam epitaxy.

    Ibanez, J., Oliva, R., de la Mare, M., Schmidbauer, M., Hernandez, S., Pellegrino, P., Scurr, D. J., Cusco, R., Artus, L., Shafi, M., Mari, R. H., Henini, M., Zhuang, Q., Godenir, A. M. R., Krier, A., Spanish Ministry of Education and Science Project No. MAT2007-63617 (Funder) & EPRSC (UK) (Funder), 11/2010, In : Journal of Applied Physics. 108, 10, p. 103504

    Research output: Contribution to journalJournal article

  63. Published

    Synthesis, characterisation and study of photoluminescent properties of head to tail poly(3-pentoxythiophene), poly(3-cyclohexylthiophene) and mixed alkoxy cyclohexyl 3-substituted polythiophenes

    Iraqi, A., Clark, D., Jones, R. & Krier, A., 06/1999, In : Synthetic Metals. 102, 1-3, p. 1220-1221 2 p.

    Research output: Contribution to journalJournal article

  64. Published

    Carrier extraction from GaSb quantum rings in GaAs solar cells using direct laser excitation

    James Asirvatham, J., Fujita, H., Carrington, P., Marshall, A. & Krier, A., 04/2014, In : IET Optoelectronics. 8, 2, p. 76-80 5 p.

    Research output: Contribution to journalJournal article

  65. Published

    Delta doping and positioning effects of type II GaSb quantum dots in GaAs solar cell

    James Asirvatham, J. S., Fujita, H., Fernández-Delgado, N., Herrera, M., Molina, S. I., Marshall, A. R. J. & Krier, A., 2015, In : Materials Research Innovations. 19, 7, p. 512-516 5 p.

    Research output: Contribution to journalJournal article

  66. Published

    Conductivity mechanisms in poly(p-phenylene vinylene) light-emitting diodes at high and low bias

    Jones, R., Krier, A., Davidson, K., Schmit, J. P. N. & Zawadzka, J., 26/02/1999, In : Thin Solid Films. 340, 1-2, p. 221-229 9 p.

    Research output: Contribution to journalJournal article

  67. Published

    InAs/InAsSb type-II strained-layer superlattices for mid-infrared LEDs

    Keen, J., Lane, D., Kesaria, M., Marshall, A. R. J. & Krier, A., 30/01/2018, In : Journal of Physics D: Applied Physics. 51, 7, 9 p., 075103.

    Research output: Contribution to journalJournal article

  68. Published

    Electroluminescence and photoluminescence of type-II InAs/InAsSb strained-layer superlattices in the mid-infrared

    Keen, J., Repiso Menendez, E., Lu, Q., Kesaria, M., Marshall, A. R. J. & Krier, A., 09/2018, In : Infrared Physics and Technology. 93, p. 375-380 6 p.

    Research output: Contribution to journalJournal article

  69. Published

    In(AsN) mid-infrared emission enhanced by rapid thermal annealing

    Kesaria, M., Birindelli, S., A.V. Velichko, A. V., Zhuang, Q., Patane, A., Capizzi, M. & Krier, A., 01/2015, In : Infrared Physics and Technology. 68, p. 138-142 5 p.

    Research output: Contribution to journalJournal article

  70. Published

    Room temperature mid-infrared InAsSbN multi-quantum well photodiodes grown by MBE

    Kesaria, M., De La Mare, M. & Krier, A., 2/11/2016, In : Journal of Physics D: Applied Physics. 49, 43, p. 435107 4 p., 43.

    Research output: Contribution to journalJournal article

  71. Published

    Modified qHAADF method for atomic column-by-column compositional quantification of semiconductor heterostructures

    Khan, A., Herrera, M., Pizarro, J., Galindo, P. L., Carrington, P. J., Fujita, H., Krier, A. & Molina, S. I., 1/02/2019, In : Journal of Materials Science. 54, 4, p. 3230-3241 12 p.

    Research output: Contribution to journalJournal article

  72. Forthcoming

    Effect of the cap layer growth temperature on the Sb distribution in InAs/InSb/InAs sub-monolayer heterostructures for mid-infrared devices

    Khan, A., Repiso Menendez, E., Herrera, M., Carrington, P., De La Mata, M., Pizarro, J., Krier, A. & Molina, S., 25/10/2019, (Accepted/In press) In : Nanotechnology.

    Research output: Contribution to journalJournal article

  73. Published

    Seeing the invisible - ultrasonic force microscopy for true subsurface elastic imaging of semiconductor nanostructures with nanoscale resolution

    Kolosov, O., Dinelli, F., Henini, M., Krier, A., Hayne, M. & Pingue, P., 2012, NSTI-Nanotech 2012. Santa Clara, USA: CRC PRESS-TAYLOR & FRANCIS GROUP, p. 24-26 3 p.

    Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSNConference contribution/Paper

  74. Published

    Nanometre scale 3D nanomechanical imaging of semiconductor structures from few nm to sub-micrometre depths

    Kolosov, O., Dinelli, F., Robson, A., Krier, A., Hayne, M., Falko, V. & Henini, M., 2015, IEEE 2015 International Interconnect Technology Conference / Materials for Advanced Metallization Conference. Grenoble, France: IEEE, p. 43-46 4 p.

    Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSNConference contribution/Paper

  75. Published

    Linear magnetoresistance due to multi-electron scattering by low-mobility islands in an inhomogeneous conductor

    Kozlova, N. V., Mori, N., Makarovsky, O., Eaves, L., Zhuang, Q., Krier, A. & Patane, A., 2/10/2012, In : Nature Communications. 3, 5 p., 1097.

    Research output: Contribution to journalJournal article

  76. Published

    Fundamental physics and practical realisation of mid-infrared photodetectors.

    Krier, A., Chakrabarti, P., Gao, H., Mao, Y., Huang, X-L. & Sherstnev, V. V., 10/2004, In : Proceedings of SPIE. 5564, p. 92-104 13 p.

    Research output: Contribution to journalJournal article

  77. Published

    Design considerations for uncooled InAs mid-infrared light emitting diodes grown by liquid phase epitaxy. .

    Krier, A. & Huang, X. L., 21/01/2006, In : Journal of Physics D: Applied Physics. 39, 2, p. 255-261 7 p.

    Research output: Contribution to journalJournal article

  78. Published

    Room temperature midinfrared electroluminescence from GaInAsSbP light emitting diodes. .

    Krier, A., Smirnov, V. M., Batty, P. J., Vasil'ev, V. I., Gagis, G. S. & Kuchinskii, V. I., 21/05/2007, In : Applied Physics Letters. 90, 21, p. 211115

    Research output: Contribution to journalJournal article

  79. Published

    Midinfrared photoluminescence and compositional modulation in pentanary GaInAsPSb alloys grown by liquid phase epitaxy. .

    Krier, A., Smirnov, V. M., Batty, P. J., Yin, M., Lai, K. T., Rybchenko, S., Haywood, S. K., Vasil'ev, V. I., Gagis, G. S. & Kuchinskii, V. I., 20/08/2007, In : Applied Physics Letters. 91, 8, p. 082102

    Research output: Contribution to journalJournal article

  80. Published

    Characterization of InAs0.91Sb0.09 for use in mid-infrared light-emitting diodes grown by liquid phase epitaxy from Sb-rich solution. .

    Krier, A., Stone, M. & Krier, S. E., 06/2007, In : Semiconductor Science and Technology. 22, 6, p. 624-628 5 p.

    Research output: Contribution to journalJournal article

  81. Published

    Mid-infrared electroluminescence at room temperature from InAsSb multi-quantum-well light-emitting diodes. .

    Krier, A., Stone, M., Zhuang, Q. D., Liu, P. W., Tsai, G. & Lin, H. H., 28/08/2006, In : Applied Physics Letters. 89, 9, p. 091110

    Research output: Contribution to journalJournal article

  82. Published

    Uncooled photodetectors for the 3-5 mu m spectral range based on III-V heterojunctions. .

    Krier, A. & Suleiman, W., 21/08/2006, In : Applied Physics Letters. 89, 8, p. 083512

    Research output: Contribution to journalJournal article

  83. Published

    The development of room temperature LEDs and lasers for the mid-infrared spectral range.

    Krier, A., Yin, M., Smirnov, V., Batty, P. J., Carrington, P., Solovev, V. & Sherstnev, V., 01/2008, In : physica status solidi (a). 205, 1, p. 129-143 15 p.

    Research output: Contribution to journalJournal article

  84. Published

    Negative differential resistance and electroluminescence from InAs light-emitting diodes grown by liquid-phase epitaxy. .

    Krier, A. & Huang, X. L., 7/02/2005, In : Applied Physics Letters. 86, 6, p. 061113

    Research output: Contribution to journalJournal article

  85. Published

    The influence of melt purification and structure defects on mid-infrared light emitting diodes. .

    Krier, A. & Sherstnev, V. V., 7/07/2003, In : Journal of Physics D: Applied Physics. 36, 13, p. 1484-1488 5 p.

    Research output: Contribution to journalJournal article

  86. Published

    Mid-infrared ring laser. .

    Krier, A., Sherstnev, V. V., Wright, D., Monakhov, A. M. & Hill, G., 12/06/2003, In : Electronics Letters. 39, 12, p. 916-917 2 p.

    Research output: Contribution to journalJournal article

  87. Published

    Physics and technology of mid-infrared light emitting diodes. .

    Krier, A., 15/03/2001, In : Philosophical Transactions A: Mathematical, Physical and Engineering Sciences . 359, 1780, p. 599-618 20 p.

    Research output: Contribution to journalJournal article

  88. Published

    Investigation of rare earth gettering for the fabrication of improved mid-infrared LEDs. .

    Krier, A., Gao, H. H. & Sherstnev, V. V., 06/2000, In : IEE Proceedings - Optoelectronics. 147, 3, p. 217-221 5 p.

    Research output: Contribution to journalJournal article

  89. Published

    High power 4.6 mu m light emitting diodes for CO detection. .

    Krier, A., Gao, H. H., Sherstnev, V. V. & Yakovlev, Y., 21/12/1999, In : Journal of Physics D: Applied Physics. 32, 24, p. 3117-3121 5 p.

    Research output: Contribution to journalJournal article

  90. Published

    Mid-infrared electroluminescence from InAsSb quantum dot light emitting diodes grown by liquid phase epitaxy. .

    Krier, A. & Huang, X. L., 11/2002, In : Physica E: Low-dimensional Systems and Nanostructures. 15, 3, p. 159-163 5 p.

    Research output: Contribution to journalJournal article

  91. Published

    Midinfrared photoluminescence of InAsSb quantum dots grown by liquid phase epitaxy. .

    Krier, A., Huang, X. L. & Hammiche, A., 4/12/2000, In : Applied Physics Letters. 77, 23, p. 3791-3793 3 p.

    Research output: Contribution to journalJournal article

  92. Published

    Liquid phase epitaxial growth and morphology of InSb quantum dots. .

    Krier, A., Huang, X. L. & Hammiche, A., 21/03/2001, In : Journal of Physics D: Applied Physics. 34, 6, p. 874-878 5 p.

    Research output: Contribution to journalJournal article

  93. Published

    Photoluminescence from InAs quantum wells grown by liquid-phase epitaxy. .

    Krier, A., Krier, S. E. & Labadi, Z., 09/2000, In : Applied Physics A. 71, 3, p. 249-253 5 p.

    Research output: Contribution to journalJournal article

  94. Published

    Modelling of InAs thin layer growth from the liquid phase. .

    Krier, A. & Labadi, Z., 06/2000, In : IEE Proceedings - Optoelectronics. 147, 3, p. 222-224 3 p.

    Research output: Contribution to journalJournal article

  95. Published

    Powerful interface light emitting diodes for methane gas detection. .

    Krier, A. & Sherstnev, V. V., 21/01/2000, In : Journal of Physics D: Applied Physics. 33, 2, p. 101-106 6 p.

    Research output: Contribution to journalJournal article

  96. Published

    LEDs for formaldehyde detection at 3.6 mu m. .

    Krier, A. & Sherstnev, V. V., 7/02/2001, In : Journal of Physics D: Applied Physics. 34, 3, p. 428-432 5 p.

    Research output: Contribution to journalJournal article

  97. Published

    A novel LED module for the detection of H2S at 3.8 mu m. .

    Krier, A., Sherstnev, V. V. & Gao, H. H., 21/07/2000, In : Journal of Physics D: Applied Physics. 33, 14, p. 1656-1661 6 p.

    Research output: Contribution to journalJournal article

  98. Published

    Optical switching in midinfrared light-emitting diodes .

    Krier, A., Sherstnev, V. V., Gao, H. H., Monakhov, A. M. & Hill, G., 22/04/2002, In : Applied Physics Letters. 80, 16, p. 2821-2823 3 p.

    Research output: Contribution to journalJournal article

  99. Published

    Interface electroluminescence from InAs quantum well LEDs grown by rapid slider liquid phase epitaxy. .

    Krier, A., Sherstnev, V. V., Labadi, Z., Krier, S. E. & Gao, H. H., 21/12/2000, In : Journal of Physics D: Applied Physics. 33, 24, p. 3156-3160 5 p.

    Research output: Contribution to journalJournal article

  100. Published

    Electroluminescence from InAsSb quantum dot light emitting diodes grown by liquid phase epitaxy

    Krier, A. & Huang, X. L., 2002, Physics and Simulation of Optoelectronic Devices X. Blood, P., Osinski, M. & Arakawa, Y. (eds.). Bellingham, Wash.: SPIE-INT SOC OPTICAL ENGINEERING, p. 70-78 9 p.

    Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSNConference contribution/Paper

Previous 1 2 Next

Back to top