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Professor Anthony Krier

Emeritus Professor

  1. 1998
  2. Published

    Light sources for wavelengths > 2 mu m grown by MBE on InP using a strain relaxed buffer

    Krier, A., Chubb, D., Krier, S. E., Hopkinson, M. & Hill, G., 10/1998, In: IEE Proceedings - Optoelectronics. 145, 5, p. 292-296 5 p.

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

  3. Published

    Rapid slider LPE growth of InAs quantum wells

    Krier, A., Labadi, Z. & Richardson, J., 10/1998, In: IEE Proceedings - Optoelectronics. 145, 5, p. 297-301 5 p.

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

  4. 1999
  5. Published

    Conductivity mechanisms in poly(p-phenylene vinylene) light-emitting diodes at high and low bias

    Jones, R., Krier, A., Davidson, K., Schmit, J. P. N. & Zawadzka, J., 26/02/1999, In: Thin Solid Films. 340, 1-2, p. 221-229 9 p.

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

  6. Published

    High quality InAs grown by liquid phase epitaxy using gadolinium gettering

    Gao, H. H., Krier, A. & Sherstnev, V. V., 05/1999, In: Semiconductor Science and Technology. 14, 5, p. 441-445 5 p.

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

  7. Published

    Synthesis, characterisation and study of photoluminescent properties of head to tail poly(3-pentoxythiophene), poly(3-cyclohexylthiophene) and mixed alkoxy cyclohexyl 3-substituted polythiophenes

    Iraqi, A., Clark, D., Jones, R. & Krier, A., 06/1999, In: Synthetic Metals. 102, 1-3, p. 1220-1221 2 p.

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

  8. Published

    Purification of epitaxial InAs grown by liquid phase epitaxy using gadolinium gettering

    Krier, A., Gao, H. H. & Sherstnev, V. V., 15/06/1999, In: Journal of Applied Physics. 85, 12, p. 8419-8422 4 p.

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

  9. Published

    InAsSb/lnAsSbP light emitting diodes for the detection of CO and CO2 at room temperature

    Gao, H. H., Krier, A., Sherstnev, V. & Yakovlev, Y., 7/08/1999, In: Journal of Physics D: Applied Physics. 32, 15, p. 1768-1772 5 p.

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

  10. Published

    InAsSbP quantum dots grown by liquid phase epitaxy

    Krier, A., Labadi, Z. & Hammiche, A., 21/10/1999, In: Journal of Physics D: Applied Physics. 32, 20, p. 2587-2589 3 p.

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

  11. Published

    High power 4.6 mu m light emitting diodes for CO detection. .

    Krier, A., Gao, H. H., Sherstnev, V. V. & Yakovlev, Y., 21/12/1999, In: Journal of Physics D: Applied Physics. 32, 24, p. 3117-3121 5 p.

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

  12. 2000
  13. Published

    Powerful interface light emitting diodes for methane gas detection. .

    Krier, A. & Sherstnev, V. V., 21/01/2000, In: Journal of Physics D: Applied Physics. 33, 2, p. 101-106 6 p.

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

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