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Professor Anthony Krier

Professor

  1. 2008
  2. Published

    Properties of dilute InAsN layers grown by liquid phase epitaxy.

    Dhar, S., Das, T. D., de la Mare, M. & Krier, A., 22/08/2008, In : Applied Physics Letters. 93, 7, p. 071905

    Research output: Contribution to journalJournal article

  3. Published

    Photoluminescence in InAsN epilayers grown by molecular beam epitaxy

    Zhuang, Q., Godenir, A. & Krier, A., 10/06/2008, In : Journal of Physics D: Applied Physics. 41, 13, p. 132002

    Research output: Contribution to journalJournal article

  4. Published

    Room temperature photoluminescence at 4.5 mu m from InAsN

    Zhuang, Q., Godenir, A. M. R., Krier, A., Lai, K. T. & Haywood, S. K., 26/03/2008, In : Journal of Applied Physics. 103, 6, p. 063520

    Research output: Contribution to journalJournal article

  5. Published

    Type II InSb/InAs quantum dot structures grown by molecular beam epitaxy using Sb-2 and As-2 fluxes

    Carrington, P., Solov'ev, V. A., Zhuang, Q., Ivanov, S. V. & Krier, A., 1/02/2008, In : Proceedings of SPIE. 6900, 69000I.

    Research output: Contribution to journalJournal article

  6. Published

    The development of room temperature LEDs and lasers for the mid-infrared spectral range.

    Krier, A., Yin, M., Smirnov, V., Batty, P. J., Carrington, P., Solovev, V. & Sherstnev, V., 01/2008, In : physica status solidi (a). 205, 1, p. 129-143 15 p.

    Research output: Contribution to journalJournal article

  7. Published

    Diode lasers for free space optical communications based on InAsSb/InAsSbP grown by LPE

    Yin, M., Krier, A., Carrington, P. J., Jones, R. & Krier, S. E., 2008, NARROW GAP SEMICONDUCTORS 2007. Murdin, BN. & Clowes, S. (eds.). DORDRECHT: Springer, p. 69-72 4 p.

    Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSNConference contribution/Paper

  8. Published

    Diode lasers for free space optical communications based on InAsSb/InAsSbP grown by LPE.

    Yin, M., Krier, A., Carrington, P. J., Jones, R. & Krier, S. E., 2008, Narrow Gap Semiconductors 2007 : Proceedings of the 13th International Conference, 8-12 July, 2007, Guildford, UK. Murdin, B. N. & Clowes, S. K. (eds.). 119 ed. Bristol: Jointly published by Springer Netherlands and Canopus Publishing Limited, Bristol, p. 69-72 4 p. (Springer Proceedings in Physics).

    Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSNChapter

  9. Published

    Electroluminescence from InSb-based mid-infrared quantum well lasers.

    Smith, S. J., Przeslak, S. J. B., Nash, G. R., Storey, C. J., Andreev, A. D., Krier, A., Yin, M., Coomber, S. D., Buckle, L., Emeny, M. T. & Ashley, T., 2008, Narrow Gap Semiconductors 2007 : Proceedings of the 13th International Conference, 8-12 July, 2007, Guildford, UK. Murdin, B. N. & Clowes, S. K. (eds.). 119 ed. Bristol: Jointly published by Springer Netherlands and Canopus Publishing Limited, Bristol, p. 159-161 3 p. (Springer Proceedings in Physics).

    Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSNChapter

  10. Published

    Growth of InAsSb quantum wells by liquid phase epitaxy.

    Yin, M., Krier, A. & Jones, R., 2008, Narrow Gap Semiconductors 2007: Proceedings of the 13th International Conference, 8-12 July, 2007, Guildford, UK. Murdin, B. N. & Clowes, S. K. (eds.). 119 ed. Bristol: Jointly published by Springer Netherlands and Canopus Publishing Limited, Bristol, p. 65-68 4 p. (Springer Proceedings in Physics).

    Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSNChapter

  11. Published

    InSb/InAs nanostructures grown by molecular beam epitaxy using Sb-2 and AS(2) fluxes

    Solov'ev, V. A., Carrington, P., Zhuang, Q., Lai, K. T., Haywood, S. K., Ivanov, S. V. & Krier, A., 2008, NARROW GAP SEMICONDUCTORS 2007. Murdin, BN. & Clowes, S. (eds.). DORDRECHT: Springer, p. 129-131 3 p.

    Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSNConference contribution/Paper

  12. Published

    InSb/InAs nanostructures grown by molecular beam epitaxy using Sb-2 and AS(2) fluxes.

    Solov'ev, V. A., Carrington, P., Zhuang, Q., Lai, K. T., Haywood, S. K., Ivanov, S. V. & Krier, A., 2008, Narrow Gap Semiconductors 2007: Proceedings of the 13th International Conference, 8-12 July, 2007, Guildford, UK. Murdin, B. N. & Clowes, S. K. (eds.). 119 ed. Bristol: Jointly published by Springer Netherlands and Canopus Publishing Limited, Bristol, p. 129-131 3 p. (Springer Proceedings in Physics).

    Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSNChapter

  13. 2007
  14. Published

    Midinfrared GaInSb/AlGaInSb quantum well laser diodes grown on GaAs. .

    Nash, G. R., Smith, S. J., Coomber, S. D., Przeslak, S., Andreev, A., Carrington, P., Yin, M., Krier, A., Buckle, L., Emeny, M. T. & Ashley, T., 24/09/2007, In : Applied Physics Letters. 91, 13, p. 131118

    Research output: Contribution to journalJournal article

  15. Published

    Reduced free carrier absorption loss in midinfrared double heterostructure diode lasers grown by liquid phase epitaxy. .

    Yin, M., Krier, A., Jones, R. & Carrington, P., 3/09/2007, In : Applied Physics Letters. 91, 10, 101104.

    Research output: Contribution to journalJournal article

  16. Published

    Midinfrared photoluminescence and compositional modulation in pentanary GaInAsPSb alloys grown by liquid phase epitaxy. .

    Krier, A., Smirnov, V. M., Batty, P. J., Yin, M., Lai, K. T., Rybchenko, S., Haywood, S. K., Vasil'ev, V. I., Gagis, G. S. & Kuchinskii, V. I., 20/08/2007, In : Applied Physics Letters. 91, 8, p. 082102

    Research output: Contribution to journalJournal article

  17. Published

    Characterization of InAs0.91Sb0.09 for use in mid-infrared light-emitting diodes grown by liquid phase epitaxy from Sb-rich solution. .

    Krier, A., Stone, M. & Krier, S. E., 06/2007, In : Semiconductor Science and Technology. 22, 6, p. 624-628 5 p.

    Research output: Contribution to journalJournal article

  18. Published

    Room temperature midinfrared electroluminescence from GaInAsSbP light emitting diodes. .

    Krier, A., Smirnov, V. M., Batty, P. J., Vasil'ev, V. I., Gagis, G. S. & Kuchinskii, V. I., 21/05/2007, In : Applied Physics Letters. 90, 21, p. 211115

    Research output: Contribution to journalJournal article

  19. Published

    Strain enhancement during annealing of GaAsN alloys.

    Zhuang, Q. D., Krier, A. & Stanley, C. R., 15/05/2007, In : Journal of Applied Physics. 101, 10, p. 103536

    Research output: Contribution to journalJournal article

  20. Published

    Midinfrared photoreflectance study of InAs-rich InAsSb and GaInAsPSb indicating negligible bowing for the spin orbit splitting energy. .

    Cripps, S. A., Hosea, T. J. C., Krier, A., Smirnov, V., Batty, P. J., Zhuang, Q. D., Lin, H. H., Liu, P. W. & Tsai, G., 24/04/2007, In : Applied Physics Letters. 92, 17, p. 172106

    Research output: Contribution to journalJournal article

  21. Published

    GaInAsPSb/GaSb heterostructures for mid-infrared light emitting diodes

    Smirnov, V. M., Batty, P. J., Jones, R., Krier, A., Vasil'ev, V. I., Gagis, G. S. & Kuchinskii, V. I., 04/2007, In : physica status solidi (a). 204, 4, p. 1047-1050 4 p.

    Research output: Contribution to journalJournal article

  22. Published

    Physical working principles of semiconductor disk lasers. .

    Averkiev, N. S., Sherstnev, V. V., Monakhov, A. M., Grebenshikova, E. A., Kislyakova, A. Y., Yakovlev, Y. P., Krier, A. & Wright, D. A., 02/2007, In : Low Temperature Physics. 33, 2-3, p. 283-290 8 p.

    Research output: Contribution to journalJournal article

  23. Published

    Mode behavior in InAs midinfrared whispering gallery lasers.

    Norris, G., Krier, A., Sherstnev, V. V., Monakhov, A. & Baranov, A., 1/01/2007, In : Applied Physics Letters. 90, 1, p. 011105

    Research output: Contribution to journalJournal article

  24. Published

    FDTD modelling of mid infrared disk lasers

    Pugh, J. R., Buss, I. J., Nash, G. R., AshleY, T., Krier, A., Cryan, M. J. & Rarity, J. G., 2007, ICTON 2007: Proceedings of the 9th International Conference on Transparent Optical Networks, Vol 4. Marciniak, M. (ed.). New York: IEEE, p. 208-211 4 p.

    Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSNConference contribution/Paper

  25. Published

    Mid-infrared InAsSbP/InAsSb quantum well laser diodes - art. no. 673808

    Yin, M. & Krier, A., 2007, TECHNOLOGIES FOR OPTICAL COUNTERMEASURES IV. Titterton, DH. & Richardson, MA. (eds.). BELLINGHAM: SPIE-INT SOC OPTICAL ENGINEERING, p. 73808-73808 9 p.

    Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSNConference contribution/Paper

  26. Published

    Pentenary GaInAsPSb for mid-infrared light-emitting diodes and lasers grown by liquid phase epitaxy - art. no. 647918

    Smirnov, V. M., Batty, P. J., Krier, A. & Jones, R., 2007, Quantum Sensing and Nanophotonic Devices IV. Razeghi, M. & Brown, GJ. (eds.). BELLINGHAM: SPIE-INT SOC OPTICAL ENGINEERING, p. 47918-47918 8 p.

    Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSNConference contribution/Paper

  27. 2006
  28. Published

    Photoluminescence and bowing parameters of InAsSb/InAs multiple quantum wells grown by molecular beam epitaxy. .

    Liu, P. W., Tsai, G., Lin, H. H., Krier, A., Zhuang, Q. D. & Stone, M, M., 13/11/2006, In : Applied Physics Letters. 89, 20, p. 201115

    Research output: Contribution to journalJournal article

  29. Published

    Mid-infrared electroluminescence at room temperature from InAsSb multi-quantum-well light-emitting diodes. .

    Krier, A., Stone, M., Zhuang, Q. D., Liu, P. W., Tsai, G. & Lin, H. H., 28/08/2006, In : Applied Physics Letters. 89, 9, p. 091110

    Research output: Contribution to journalJournal article

  30. Published

    Uncooled photodetectors for the 3-5 mu m spectral range based on III-V heterojunctions. .

    Krier, A. & Suleiman, W., 21/08/2006, In : Applied Physics Letters. 89, 8, p. 083512

    Research output: Contribution to journalJournal article

  31. Published

    Design considerations for uncooled InAs mid-infrared light emitting diodes grown by liquid phase epitaxy. .

    Krier, A. & Huang, X. L., 21/01/2006, In : Journal of Physics D: Applied Physics. 39, 2, p. 255-261 7 p.

    Research output: Contribution to journalJournal article

  32. Published

    Development of 3.7 mu m InAsSb DH and QW diode laser and LED sources grown by liquid phase epitaxy - art. no. 639707

    Yin, M., Krier, A., Jones, R., Krier, S. & Campbell, D., 2006, Technologies for Optical Countermeasures III. Titterton, DH. (ed.). BELLINGHAM: SPIE-INT SOC OPTICAL ENGINEERING, p. 39707-39707 6 p.

    Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSNConference contribution/Paper

  33. Published

    Mid-infrared diode lasers for free space optical communications

    Yin, M., Krier, A., Krier, S., Jones, R. & Carrington, P., 2006, Advanced Free-Space Optical Communication Techniques/Applications II and Photonic Components Architectures for Microwave Systems and Displays. Sjoqvist, LJ., Wilson, RA. & Merlet, TJ. (eds.). BELLINGHAM: SPIE-INT SOC OPTICAL ENGINEERING, p. U101-U106 6 p.

    Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSNConference contribution/Paper

  34. 2005
  35. Published

    Semiconductor WGM lasers for the mid-IR spectral range

    Sherstnev, V. V., Monakhov, A. M., Astakhova, A. P., Kislyakova, A. Y., Yakovlev, Y. P., Averkiev, N. S., Krier, A. & Hill, G., 09/2005, In : Semiconductors. 39, 9, p. 1087-1092 6 p.

    Research output: Contribution to journalJournal article

  36. Published

    Negative differential resistance and electroluminescence from InAs light-emitting diodes grown by liquid-phase epitaxy. .

    Krier, A. & Huang, X. L., 7/02/2005, In : Applied Physics Letters. 86, 6, p. 061113

    Research output: Contribution to journalJournal article

  37. Published

    InAs whispering gallery mode lasers for the mid-infrared spectral range. .

    Sherstnev, V., Monakhov, A., Krier, A. & Wright, D. A., 02/2005, In : IEE Proceedings - Optoelectronics. 152, 1, p. 1-5 5 p.

    Research output: Contribution to journalJournal article

  38. 2004
  39. Published

    Fundamental physics and practical realisation of mid-infrared photodetectors.

    Krier, A., Chakrabarti, P., Gao, H., Mao, Y., Huang, X-L. & Sherstnev, V. V., 10/2004, In : Proceedings of SPIE. 5564, p. 92-104 13 p.

    Research output: Contribution to journalJournal article

  40. Published

    Room-temperature photoluminescence of Ga0.96In0.04As0.11Sb0-89 lattice matched to InAs. .

    Moiseev, K. D., Krier, A. & Yakovlev, Y. P., 08/2004, In : Journal of Electronic Materials. 33, 8, p. 867-872 6 p.

    Research output: Contribution to journalJournal article

  41. Published

    Fabrication and characterization of an InAs0.96Sb0.04 photodetector for MIR applications. .

    Chakrabarti, P., Krier, A., Huang, X. L. & Fenge, P., 5/05/2004, In : IEEE Electron Device Letters. 25, 5, p. 283-285 3 p.

    Research output: Contribution to journalJournal article

  42. Published

    The effect of current crowding on the electroluminescence of InAs mid-infrared light emitting diodes. .

    Monakhov, A., Krier, A. & Sherstnev, V. V., 03/2004, In : Semiconductor Science and Technology. 19, 3, p. 480-484 5 p.

    Research output: Contribution to journalJournal article

  43. Published

    Structural modifications of InAs based materials for mid-infrared optoelectronic devices

    Nohavica, D. & Krier, A., 2004, ASDAM 2004: The Fifth International Conference on Advanced Semiconductor Devices and Microsystems. Osvald, J. & Hascik, S. (eds.). New York: IEEE, p. 203-206 4 p.

    Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSNConference contribution/Paper

  44. 2003
  45. Published

    Analysis and simulation of a mid-infrared P+-InAs0.55Sb0.15P0.30/n(0)-InAs0.89Sb0.11/N+-InAs0.55Sb0.15P0.30 double heterojunction photodetector grown by LPE. .

    Chakrabarti, P., Krier, A. & Morgan, A. F., 1/10/2003, In : IEEE Transactions on Electron Devices. 50, 10, p. 2049-2058 10 p.

    Research output: Contribution to journalJournal article

  46. Published

    Double-heterojunction photodetector for midinfrared applications: theoretical model and experimental results.

    Chakrabarti, P., Krier, A. & Morgan, A. F., 1/09/2003, In : Optical Engineering. 42, 9, p. 2614-2623 10 p.

    Research output: Contribution to journalJournal article

  47. Published

    Mid-infrared whispering gallery mode ring lasers and LEDs. .

    Wright, D. A., Sherstnev, V. V., Krier, A., Monakhov, A. M. & Hill, G., 08/2003, In : IEE Proceedings - Optoelectronics. 150, 4, p. 314-317 4 p.

    Research output: Contribution to journalJournal article

  48. Published

    The influence of melt purification and structure defects on mid-infrared light emitting diodes. .

    Krier, A. & Sherstnev, V. V., 7/07/2003, In : Journal of Physics D: Applied Physics. 36, 13, p. 1484-1488 5 p.

    Research output: Contribution to journalJournal article

  49. Published

    Mid-infrared ring laser. .

    Krier, A., Sherstnev, V. V., Wright, D., Monakhov, A. M. & Hill, G., 12/06/2003, In : Electronics Letters. 39, 12, p. 916-917 2 p.

    Research output: Contribution to journalJournal article

  50. Published

    Mid-infrared lasing induced by noise.

    Sherstnev, V. V., Krier, A., Balanov, A. G., Janson, N. B., Silchenko, A. N. & McClintock, P. V. E., 03/2003, In : Fluctuation and Noise Letters. 3, 1, p. L91-L95 5 p.

    Research output: Contribution to journalJournal article

  51. Published

    High-pressure measurements of mid-infrared electroluminescence from InAs light-emitting diodes at 3.3 mu m. .

    Choulis, S. A., Andreev, A., Merrick, M., Adams, A. R., Murdin, B. N., Krier, A. & Sherstnev, V. V., 24/02/2003, In : Applied Physics Letters. 82, 8, p. 1149-1151 3 p.

    Research output: Contribution to journalJournal article

  52. Published

    The effect of pressure on the radiative efficiency of InAs based light emitting diodes. .

    Choulis, S. A., Andreev, A., Merrick, M., Jin, S., Clarke, D. G., Murdin, B. N., Adams, A. R., Krier, A. & Sherstnev, V. V., 1/02/2003, In : physica status solidi (b). 235, 2, p. 312-316 5 p.

    Research output: Contribution to journalJournal article

  53. Published

    Interface luminescence and lasing at a type II single broken-gap heterojunction

    Moiseev, K. D., Mikhailova, M. P., Yakovlev, Y. P. & Krier, A., 2003, 10TH INTERNATIONAL SYMPOSIUM ON NANOSTRUCTURES: PHYSICS AND TECHNOLOGY. Alferov, ZI. & Esaki, L. (eds.). Bellingham, Wash.: SPIE-INT SOC OPTICAL ENGINEERING, p. 340-342 3 p.

    Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSNConference contribution/Paper

  54. Published

    Mid-infrared whispering gallery lasers

    Wright, D. A., Krier, A., Sherstnev, V. V. & Monakhov, A., 2003, 2003 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2. NEW YORK: IEEE, p. 280-280 1 p.

    Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSNConference contribution/Paper

  55. Published

    Optical and electrical characterisation of an p(+)-InAs0.96Sb0.04/n(0)-InAs0.96Sb0.04/n(+)-InAs photodetector for mid-infrared application

    Chakrabarti, P., Krier, A., Huang, X. L., Fenge, P. & Lal, R. K., 2003, PROCEEDINGS OF THE INTERNATIONAL 2003 SBMO/IEEE MTT-S INTERNATIONAL MICROWAVE AND OPTOELECTRONICS CONFERENCE - IMOC 2003, VOLS I AND II. Kalinowski, HJ., Romero, MA. & Barbin, SE. (eds.). NEW YORK: IEEE, p. 87-92 6 p.

    Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSNConference contribution/Paper

  56. 2002
  57. Published

    Growth of self-assembled PbSe quantum-dots on GaSb(100) by liquid phase epitaxy. .

    Huang, X. L., Labadi, Z., Hammiche, A. & Krier, A., 7/12/2002, In : Journal of Physics D: Applied Physics. 35, 23, p. 3091-3095 5 p.

    Research output: Contribution to journalJournal article

  58. Published

    Mid-infrared electroluminescence from InAsSb quantum dot light emitting diodes grown by liquid phase epitaxy. .

    Krier, A. & Huang, X. L., 11/2002, In : Physica E: Low-dimensional Systems and Nanostructures. 15, 3, p. 159-163 5 p.

    Research output: Contribution to journalJournal article

  59. Published

    Tuning characteristics of InAsSb continuous-wave lasers. .

    Sherstnev, V., Krier, A., Popov, A. & Werle, P., 20/05/2002, In : Applied Physics Letters. 80, 20, p. 3676-3678 3 p.

    Research output: Contribution to journalJournal article

  60. Published

    Optical switching in midinfrared light-emitting diodes .

    Krier, A., Sherstnev, V. V., Gao, H. H., Monakhov, A. M. & Hill, G., 22/04/2002, In : Applied Physics Letters. 80, 16, p. 2821-2823 3 p.

    Research output: Contribution to journalJournal article

  61. Published

    Interface-induced electroluminescence in the type IIP-Ga0.84In0.16As0.22Sb0.78/n-In0.83Ga0.17As0.82Sb0.18 single heterojunction.

    Moiseev, K. D., Krier, A., Mikhailova, M. P. & Yakovlev, Y. P., 7/04/2002, In : Journal of Physics D: Applied Physics. 35, 7, p. 631-636 6 p.

    Research output: Contribution to journalJournal article

  62. Published

    High tunability and superluminescence in InAs mid-infrared light emitting diodes. .

    Sherstnev, V. V., Krier, A. & Hill, G., 7/02/2002, In : Journal of Physics D: Applied Physics. 35, 3, p. 196-198 3 p.

    Research output: Contribution to journalJournal article

  63. Published

    General theory of multi-phase melt crystallization. .

    Charykov, N. A., Sherstnev, V. V. & Krier, A., 02/2002, In : Journal of Crystal Growth. 234, 4, p. 762-772 11 p.

    Research output: Contribution to journalJournal article

  64. Published

    Electroluminescence from InAsSb quantum dot light emitting diodes grown by liquid phase epitaxy

    Krier, A. & Huang, X. L., 2002, Physics and Simulation of Optoelectronic Devices X. Blood, P., Osinski, M. & Arakawa, Y. (eds.). Bellingham, Wash.: SPIE-INT SOC OPTICAL ENGINEERING, p. 70-78 9 p.

    Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSNConference contribution/Paper

  65. 2001
  66. Published

    Interface photoluminescence in type II broken-gap P-Ga0.84In0.16As0.22Sb0.78/p-InAs single heterostructures. .

    Moiseev, K. D., Krier, A. & Yakovlev, Y. P., 15/10/2001, In : Journal of Applied Physics. 90, 8, p. 3988-3992 5 p.

    Research output: Contribution to journalJournal article

  67. Published

    Liquid phase epitaxial growth and morphology of InSb quantum dots. .

    Krier, A., Huang, X. L. & Hammiche, A., 21/03/2001, In : Journal of Physics D: Applied Physics. 34, 6, p. 874-878 5 p.

    Research output: Contribution to journalJournal article

  68. Published

    Physics and technology of mid-infrared light emitting diodes. .

    Krier, A., 15/03/2001, In : Philosophical Transactions A: Mathematical, Physical and Engineering Sciences . 359, 1780, p. 599-618 20 p.

    Research output: Contribution to journalJournal article

  69. Published

    LEDs for formaldehyde detection at 3.6 mu m. .

    Krier, A. & Sherstnev, V. V., 7/02/2001, In : Journal of Physics D: Applied Physics. 34, 3, p. 428-432 5 p.

    Research output: Contribution to journalJournal article

  70. Published

    Investigation on InGaAs/InAlAs quantum cascade lasers.

    Zhang, Q. S., Liu, F. Q., Zhang, Y. Z., Wang, Z. G., Gao, H. H. & Krier, A., 2001, In : Journal of Infrared and Millimeter Waves. 20, 1, p. 41-43 3 p.

    Research output: Contribution to journalJournal article

  71. Published

    Mid-infrared lasers operating on a single quantum well at the type II heterointerface

    Moiseev, K. D., Mikhailova, M. P., Yakovlev, Y. P. & Krier, A., 2001, LEOS 2001: 14TH ANNUAL MEETING OF THE IEEE LASERS & ELECTRO-OPTICS SOCIETY, VOLS 1 AND 2, PROCEEDINGS. New York: IEEE, Vol. 2. p. 534-535 2 p.

    Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSNConference contribution/Paper

  72. 2000
  73. Published

    Interface electroluminescence from InAs quantum well LEDs grown by rapid slider liquid phase epitaxy. .

    Krier, A., Sherstnev, V. V., Labadi, Z., Krier, S. E. & Gao, H. H., 21/12/2000, In : Journal of Physics D: Applied Physics. 33, 24, p. 3156-3160 5 p.

    Research output: Contribution to journalJournal article

  74. Published

    Superluminescence in InAsSb circular-ring-mode light-emitting diodes for CO gas detection. .

    Sherstnev, V. V., Monahov, A. M., Krier, A. & Hill, G., 11/12/2000, In : Applied Physics Letters. 77, 24, p. 3908-3910 3 p.

    Research output: Contribution to journalJournal article

  75. Published

    Midinfrared photoluminescence of InAsSb quantum dots grown by liquid phase epitaxy. .

    Krier, A., Huang, X. L. & Hammiche, A., 4/12/2000, In : Applied Physics Letters. 77, 23, p. 3791-3793 3 p.

    Research output: Contribution to journalJournal article

  76. Published

    Nanoindentation studies of MOVPE grown GaAs/InP heterostructures. .

    Arivuoli, D., Lawson, N. S., Krier, A., Attolini, G. & Pelosi, C., 16/10/2000, In : Materials Chemistry and Physics. 66, 2 - 3, p. 207-212 6 p.

    Research output: Contribution to journalJournal article

  77. Published

    Photoluminescence from InAs quantum wells grown by liquid-phase epitaxy. .

    Krier, A., Krier, S. E. & Labadi, Z., 09/2000, In : Applied Physics A. 71, 3, p. 249-253 5 p.

    Research output: Contribution to journalJournal article

  78. Published

    Room-temperature InAs0.89Sb0.11 photodetectors for CO detection at 4.6 mu m. .

    Gao, H. H., Krier, A. & Sherstnev, V. V., 7/08/2000, In : Applied Physics Letters. 77, 6, p. 872-874 3 p.

    Research output: Contribution to journalJournal article

  79. Published

    A novel LED module for the detection of H2S at 3.8 mu m. .

    Krier, A., Sherstnev, V. V. & Gao, H. H., 21/07/2000, In : Journal of Physics D: Applied Physics. 33, 14, p. 1656-1661 6 p.

    Research output: Contribution to journalJournal article

  80. Published

    Investigation of rare earth gettering for the fabrication of improved mid-infrared LEDs. .

    Krier, A., Gao, H. H. & Sherstnev, V. V., 06/2000, In : IEE Proceedings - Optoelectronics. 147, 3, p. 217-221 5 p.

    Research output: Contribution to journalJournal article

  81. Published

    Modelling of InAs thin layer growth from the liquid phase. .

    Krier, A. & Labadi, Z., 06/2000, In : IEE Proceedings - Optoelectronics. 147, 3, p. 222-224 3 p.

    Research output: Contribution to journalJournal article

  82. Published

    Powerful interface light emitting diodes for methane gas detection. .

    Krier, A. & Sherstnev, V. V., 21/01/2000, In : Journal of Physics D: Applied Physics. 33, 2, p. 101-106 6 p.

    Research output: Contribution to journalJournal article

  83. 1999
  84. Published

    High power 4.6 mu m light emitting diodes for CO detection. .

    Krier, A., Gao, H. H., Sherstnev, V. V. & Yakovlev, Y., 21/12/1999, In : Journal of Physics D: Applied Physics. 32, 24, p. 3117-3121 5 p.

    Research output: Contribution to journalJournal article

  85. Published

    InAsSbP quantum dots grown by liquid phase epitaxy

    Krier, A., Labadi, Z. & Hammiche, A., 21/10/1999, In : Journal of Physics D: Applied Physics. 32, 20, p. 2587-2589 3 p.

    Research output: Contribution to journalJournal article

  86. Published

    InAsSb/lnAsSbP light emitting diodes for the detection of CO and CO2 at room temperature

    Gao, H. H., Krier, A., Sherstnev, V. & Yakovlev, Y., 7/08/1999, In : Journal of Physics D: Applied Physics. 32, 15, p. 1768-1772 5 p.

    Research output: Contribution to journalJournal article

  87. Published

    Purification of epitaxial InAs grown by liquid phase epitaxy using gadolinium gettering

    Krier, A., Gao, H. H. & Sherstnev, V. V., 15/06/1999, In : Journal of Applied Physics. 85, 12, p. 8419-8422 4 p.

    Research output: Contribution to journalJournal article

  88. Published

    Synthesis, characterisation and study of photoluminescent properties of head to tail poly(3-pentoxythiophene), poly(3-cyclohexylthiophene) and mixed alkoxy cyclohexyl 3-substituted polythiophenes

    Iraqi, A., Clark, D., Jones, R. & Krier, A., 06/1999, In : Synthetic Metals. 102, 1-3, p. 1220-1221 2 p.

    Research output: Contribution to journalJournal article

  89. Published

    High quality InAs grown by liquid phase epitaxy using gadolinium gettering

    Gao, H. H., Krier, A. & Sherstnev, V. V., 05/1999, In : Semiconductor Science and Technology. 14, 5, p. 441-445 5 p.

    Research output: Contribution to journalJournal article

  90. Published

    Conductivity mechanisms in poly(p-phenylene vinylene) light-emitting diodes at high and low bias

    Jones, R., Krier, A., Davidson, K., Schmit, J. P. N. & Zawadzka, J., 26/02/1999, In : Thin Solid Films. 340, 1-2, p. 221-229 9 p.

    Research output: Contribution to journalJournal article

  91. 1998
  92. Published

    Light sources for wavelengths > 2 mu m grown by MBE on InP using a strain relaxed buffer

    Krier, A., Chubb, D., Krier, S. E., Hopkinson, M. & Hill, G., 10/1998, In : IEE Proceedings - Optoelectronics. 145, 5, p. 292-296 5 p.

    Research output: Contribution to journalJournal article

  93. Published

    Rapid slider LPE growth of InAs quantum wells

    Krier, A., Labadi, Z. & Richardson, J., 10/1998, In : IEE Proceedings - Optoelectronics. 145, 5, p. 297-301 5 p.

    Research output: Contribution to journalJournal article

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