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Professor Anthony Krier

Emeritus Professor

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  1. 2015
  2. Published

    Effect of doping on the morphology of GaSb/GaAs nanostructures for solar cells

    Fernández-Delgado, N., Herrera, M., Molina, S. I., Castro, C., Duguay, S., James, J. S. & Krier, A., 30/12/2015, In: Applied Surface Science. 359, p. 676-678 3 p.

    Research output: Contribution to Journal/Magazine › Letter › peer-review

  3. Published

    Open-circuit voltage recovery in type II GaSb/GaAs quantum ring solar cells under high concentration

    Fujita, H., Carrington, P. J., Wagener, M. C., Botha, J. R., Marshall, A. R. J., James, J., Krier, A., Lee, K-H. & Ekins-Daukes, N. J., 12/2015, In: Progress in Photovoltaics: Research and Applications. 23, 12, p. 1896-1900 5 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  4. Published

    Low bandgap mid-infrared thermophotovoltaic arrays based on InAs

    Krier, A., Yin, M., Marshall, A., Kesaria, M., Krier, S., McDougall, S., Meredith, W., Johnson, A. D., Inskip, J. & Scholes, A., 11/2015, In: Infrared Physics and Technology. 73, p. 126-129 4 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  5. Published

    Peculiarities of the hydrogenated In(AsN) alloy

    Birindelli, S., Kesaria, M., Giubertoni, D., Pettinari, G., Velichko, A. V., Zhuang, Q., Krier, A., Patane, A., Polimeni, A. & Capizzi, M., 14/09/2015, In: Semiconductor Science and Technology. 30, p. 105030 10 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  6. Published

    InAsSb-based nBn photodetectors: lattice mismatched growth on GaAs and low-frequency noise performance

    Craig, A., Thompson, M., Tian, Z-B., Krishna, S., Krier, A. & Marshall, A., 24/08/2015, In: Semiconductor Science and Technology. 30, 10, 7 p., 105011.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  7. Published

    Extended wavelength mid-infrared photoluminescence from type-I InAsN and InGaAsN dilute nitride quantum wells grown on InP

    Wheatley, R., Kesaria, M., Mwast, L. J., Kirch, J. D., Kuech, T. F., Marshall, A., Zhuang, Q. & Krier, A., 10/06/2015, In: Applied Physics Letters. 106, 4 p., 232105.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  8. Published

    Characterisation of Ga(1-x)In(x)Sb quantum wells (x~0.3) grown on GaAs using AlGaSb interface misfit buffer

    Hayton, J. P., Marshall, A. R. J., Thompson, M. D. & Krier, A., 19/05/2015, In: AIMS Materials Science. 2, 2, p. 86-96 11 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  9. Published

    Gain and threshold current in type II In(As)Sb mid-infrared quantum dot lasers

    Lu, Q., Zhuang, Q. & Krier, A., 15/04/2015, In: Photonics. 2, 2, p. 414-425 12 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  10. Published

    ZnO-based thin film transistors employing aluminum titanate gate dielectrics deposited by spray pyrolysis at ambient air

    Afouxenidis, D., Mazzocco, R., Vourlias, G., Livesley, P., Krier, A., Milne, W. I., Kolosov, O. & Adamopoulos, G., 8/04/2015, In: ACS Applied Materials and Interfaces. 7, 13, p. 7334-7341 8 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  11. Published

    H-tailored surface conductivity in narrow band gap In(AsN)

    Velichko, A. V., Patane, A., Capizzi, M., Sandall, I. C., Giubertoni, D., Makarovsky, O., Polimeni, A., Krier, A., Zhuang, Q. & Tan, C. H., 12/01/2015, In: Applied Physics Letters. 106, 2, 4 p., 022111.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

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