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Professor Anthony Krier

Emeritus Professor

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  1. 2015
  2. Published

    In(AsN) mid-infrared emission enhanced by rapid thermal annealing

    Kesaria, M., Birindelli, S., A.V. Velichko, A. V., Zhuang, Q., Patane, A., Capizzi, M. & Krier, A., 01/2015, In: Infrared Physics and Technology. 68, p. 138-142 5 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  3. Published

    Delta doping and positioning effects of type II GaSb quantum dots in GaAs solar cell

    James Asirvatham, J. S., Fujita, H., Fernández-Delgado, N., Herrera, M., Molina, S. I., Marshall, A. R. J. & Krier, A., 2015, In: Materials Research Innovations. 19, 7, p. 512-516 5 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  4. Published

    High-mobility Gallium Indium Zinc Oxide-based thin film transistors grown by Spray Pyrolysis in Air

    Afouxenidis, D., Kolosov, O., Vourlias, G., Krier, A., Milne, W. I. & Adamopoulos, G., 2015.

    Research output: Contribution to conference - Without ISBN/ISSN › Poster › peer-review

  5. Published

    Low-voltage ZnO thin-film transistors employing Nd2O3 high-k dielectrics deposited by spray pyrolysis in air

    Bin Esro, M., Kolosov, O., Vourlias, G., Krier, A., Milne, W. I. & Adamopoulos, G., 2015.

    Research output: Contribution to conference - Without ISBN/ISSN › Poster › peer-review

  6. Published

    Nanometre scale 3D nanomechanical imaging of semiconductor structures from few nm to sub-micrometre depths

    Kolosov, O., Dinelli, F., Robson, A., Krier, A., Hayne, M., Falko, V. & Henini, M., 2015, IEEE 2015 International Interconnect Technology Conference / Materials for Advanced Metallization Conference. Grenoble, France: IEEE, p. 43-46 4 p.

    Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review

  7. Published

    Solution processed a-LaAlO3 gate dielectrics for their applications in thin film transistors employing metal oxide semiconducting channels

    Bin Esro, M., Mazzocco, R., Vourlias, G., Krier, A., Milne, W. I., Kolosov, O. & Adamopoulos, G., 2015.

    Research output: Contribution to conference - Without ISBN/ISSN › Poster › peer-review

  8. 2014
  9. Published

    Photoluminescence studies of individual and few GaSb/GaAs quantum rings

    Young, M. P., Woodhead, C. S., Roberts, J., Noori, Y. J., Noble, M. T., Krier, A., Smakman, E. P., Koenraad, P. M., Hayne, M. & Young, R. J., 1/11/2014, In: AIP Advances. 4, 11, 6 p., 117127.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  10. Published

    Impact ionization and large room-temperature magnetoresistance in micron-sized high-mobility InAs channels

    Velichko, A. V., Makarovsky, O., Mori, N., Eaves, L., Krier, A., Zhuang, Q. & Patane, A., 20/08/2014, In: Physical review B. 90, 7 p., 085309.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  11. Published

    The structural evolution of InN nanorods to microstructures on Si (111) by molecular beam epitaxy

    Anyebe, E., Zhuang, Q., Kesaria, M. & Krier, A., 08/2014, In: Semiconductor Science and Technology. 29, 8, 7 p., 085010.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  12. Published

    Evaluation of the two-photon absorption characteristics of GaSb/GaAs quantum rings

    Wagener, M. C., Carrington, P. J., Botha, J. R. & Krier, A., 28/07/2014, In: Journal of Applied Physics. 116, 4, 6 p., 044304.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  13. Published

    InSb quantum dots for the mid-infrared spectral range grown on GaAs substrates using metamorphic InAs buffer layers

    Lu, Q., Zhuang, Q., Marshall, A., Kesaria, M., Beanland, R. & Krier, A., 12/05/2014, In: Semiconductor Science and Technology. 29, 7, 8 p., 075011 .

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  14. Published

    Carrier extraction from GaSb quantum rings in GaAs solar cells using direct laser excitation

    James Asirvatham, J., Fujita, H., Carrington, P., Marshall, A. & Krier, A., 04/2014, In: IET Optoelectronics. 8, 2, p. 76-80 5 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  15. Published

    Characterisation of InAs/GaAs quantum dots intermediate band photovoltaic devices

    Garduno-Nolasco, E., Carrington, P. J., Krier, A. & Missous, M., 04/2014, In: IET Optoelectronics. 8, 2, p. 71-75 5 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  16. Published

    Carrier extraction behaviour in type II GaSb/GaAs quantum ring solar cells

    Fujita, H., James Asirvatham, J., Carrington, P., Marshall, A., Krier, A., Wagener, M. C. & Botha, J. R., 03/2014, In: Semiconductor Science and Technology. 29, 3, 5 p., 035014.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  17. Published

    Photocapacitance study of type-II GaSb/GaAs quantum ring solar cells

    Wagener, M. C., Carrington, P. J., Botha, J. R. & Krier, A., 7/01/2014, In: Journal of Applied Physics. 115, 1, 3 p., 014302.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  18. Published

    Gain and tuning characteristics of mid-infrared InSb quantum dot diode lasers

    Lu, Q., Zhuang, Q., Hayton, J., Yin, M. & Krier, A., 2014, In: Applied Physics Letters. 105, 3, 3 p., 031115.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  19. 2013
  20. Published

    Mid-infrared InAs0.79Sb0.21-based nBn photodetectors with Al0.9Ga0.2As0.1Sb0.9 barrier layers, and comparisons with InAs0.87Sb0.13 p-i-n diodes, both grown on GaAs using interfacial misfit arrays

    Craig, A., Marshall, A., Tian, Z-B., Krishna, S. & Krier, A., 16/12/2013, In: Applied Physics Letters. 103, 4 p., 253502.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  21. Published

    Antimonide quantum dot nanostructures for novel photonic device applications

    Krier, A., Carrington, P., Zhuang, Q., Young, R., Hayne, M., Lu, Q., James Asirvatham, J., Wagener, M., Botha, J. R., Koenraad, P. M. & Smakman, E. P., 5/11/2013, The wonder of nanotechnology: quantum optoelectronic devices and applications . SPIE

    Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Chapter (peer-reviewed) › peer-review

  22. E-pub ahead of print

    Simulation of the enhanced infrared photoresponse of type-II GaSb/GaAs quantum ring solar cells

    Wagener, M. C., Carrington, P. J., Botha, J. R. & Krier, A., 6/08/2013, (E-pub ahead of print) In: Applied Physics Letters. 103, 6, 4 p., 063902.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  23. Published

    Rapid thermal annealing and photoluminescence of type-II GaSb single monolayer quantum dot stacks

    Mahajumi, A. S., Carrington, P., Kostakis, I., Missous, M., Sanchez, A., Zhuang, Q., Young, R., Hayne, M. & Krier, A., 31/07/2013, In: Journal of Physics D: Applied Physics. 46, 30, 6 p., 305104.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  24. Published

    Long-Wavelength Photoluminescence from Stacked Layers of High-Quality Type-II GaSb/GaAs Quantum Rings

    Carrington, P. J., Young, R. J., Hodgson, P. D., Sanchez, A. M., Hayne, M. & Krier, A., 03/2013, In: Crystal Growth and Design. 13, 3, p. 1226-1230 5 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  25. Published

    InAs-based dilute nitride materials and devices for the mid-infrared spectral range

    Krier, A., De La Mare, M., Zhuang, Q., Carrington, P. J. & Patane, A., 4/02/2013, In: Proceedings of SPIE. 8631, 86311Q.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  26. 2012
  27. Published

    Enhanced infrared photo-response from GaSb/GaAs quantum ring solar cells

    Carrington, P. J., Wagener, M. C., Botha, J. R., Sanchez, A. M. & Krier, A., 3/12/2012, In: Applied Physics Letters. 101, 23, 5 p., 231101.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  28. Published

    Effects of substrate pm M comtent on the growth of the mid-infrared dilute nitride InAsN alloy

    De La Mare, M., Zhuang, Q., Krier, A. & Patane, A., 3/10/2012, In: Journal of Physics D: Applied Physics. 45, 39, p. 395103-395105 3 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  29. Published

    Linear magnetoresistance due to multi-electron scattering by low-mobility islands in an inhomogeneous conductor

    Kozlova, N. V., Mori, N., Makarovsky, O., Eaves, L., Zhuang, Q., Krier, A. & Patane, A., 2/10/2012, In: Nature Communications. 3, 5 p., 1097.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  30. Published

    Development of dilute nitride materials for mid-infrared diode lasers

    Krier, A., de la Mare, M., Carrington, P. J., Thompson, M., Zhuang, Q., Patane, A. & Kudrawiec, R., 09/2012, In: Semiconductor Science and Technology. 27, 9, 8 p., 094009 .

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  31. Published

    Type II GaSb/GaAs quantum dot/ring stacks with extended photoresponse for efficient solar cells

    Carrington, P. J., Mahajumi, A. S., Wagener, M. C., Botha, J. R., Zhuang, Q. & Krier, A., 15/05/2012, In: Physica B: Condensed Matter. 407, 10, p. 1493-1496 4 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  32. Published

    Near infrared photoluminescence observed in dilute GaSbBi alloys grown by liquid phase epitaxy

    Das, S. K., Das, T. D., Dhar, S., de la Mare, M. & Krier, A., 01/2012, In: Infrared Physics and Technology. 55, 1, p. 156-160 5 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  33. Published

    Raman spectroscopy of pentanary GaInAsSbP narrow gap alloys lattice matched to InAs and GaSb

    Cheetham, K. J., Carrington, P. J., Krier, A., Patel, I. I. & Martin, F. L., 01/2012, In: Semiconductor Science and Technology. 27, 1, p. - 4 p., 015004.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  34. Published

    Seeing the invisible - ultrasonic force microscopy for true subsurface elastic imaging of semiconductor nanostructures with nanoscale resolution

    Kolosov, O., Dinelli, F., Henini, M., Krier, A., Hayne, M. & Pingue, P., 2012, NSTI-Nanotech 2012. Santa Clara, USA: CRC PRESS-TAYLOR & FRANCIS GROUP, p. 24-26 3 p.

    Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review

  35. 2011
  36. Published

    Direct evidence for suppression of Auger recombination in GaInAsSbP/InAs mid-infrared light-emitting diodes

    Cheetham, K. J., Krier, A., Marko, I. P., Aldukhayel, A. & Sweeney, S. J., 3/10/2011, In: Applied Physics Letters. 99, 14, p. - 3 p., 141110.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  37. Published

    N incorporation and photoluminescence in In-rich InGaAsN grown on InAs by liquid phase epitaxy

    de la Mare, M., Das, S. C., Das, T. D., Dhar, S. & Krier, A., 10/08/2011, In: Journal of Physics D: Applied Physics. 44, 31, p. - 7 p., 315102.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  38. Published

    Cyclotron resonance mass and Fermi energy pinning in the In(AsN) alloy.

    Drachenko, O., Patane, A., Kozlova, N. V., Zhuang, Q., Krier, A., Eaves, L., Helm, M., EU Contract No. RII3-CT-2004-506239 (Funder), DFG Grant Nos. DR832/3-1 (Funder), DFG KO 3743/1-1 (Funder) & AOBJ: 550341 (Funder), 04/2011, In: Applied Physics Letters. 98, 16, p. 162109

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  39. Published

    Raman scattering in InAsxSbyP1-x-y alloys grown by gas source MBE.

    Cheetham, K. J., Krier, A., Patel, I. I., Martin, F. L., Tzeng, J-S., Wu, C-J., Lin, H-H. & EPSRC Studentship for KJC (Funder), 2/03/2011, In: Journal of Physics D: Applied Physics. 44, 8, p. 085405

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  40. Published

    Low bandgap GaInAsSbP pentanary thermophotovoltaic diodes

    Cheetham, K. J., Carrington, P. J., Cook, N. B. & Krier, A., 02/2011, In: Solar Energy Materials and Solar Cells. 95, 2, p. 534-537 4 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  41. Published

    MBE growth and characterization of dilute nitrides for mid-infrared optoelectronic devices

    de la Mare, M., Krier, A., Zhuang, Q., Carrington, P. & Patane, A., 2011, In: Proceedings of SPIE. 7945, 79450L

    Research output: Contribution to Journal/Magazine › Journal article

  42. Published

    Midinfrared InAsSbN/InAs Multiquantum Well Light-Emitting Diodes

    Carrington, P., de la Mare, M., Cheetham, K. J., Zhuang, Q. & Krier, A., 2011, In: Advances in OptoElectronics. 2011, n/a, 8 p., 145012.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  43. Published

    Photoreflectance study of N- and Sb-related modifications of the energy gap and spin-orbit splitting in InNAsSb alloys

    Kudrawiec, R., Latkowska, M., Misiewicz, J., Zhuang, Q., Godenir, A. M. R. & Krier, A., 2011, In: Applied Physics Letters. 99, 1, 3 p., 011904.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  44. 2010
  45. Published

    Structural and optical properties of dilute InAsN grown by molecular beam epitaxy.

    Ibanez, J., Oliva, R., de la Mare, M., Schmidbauer, M., Hernandez, S., Pellegrino, P., Scurr, D. J., Cusco, R., Artus, L., Shafi, M., Mari, R. H., Henini, M., Zhuang, Q., Godenir, A. M. R., Krier, A., Spanish Ministry of Education and Science Project No. MAT2007-63617 (Funder) & EPRSC (UK) (Funder), 11/2010, In: Journal of Applied Physics. 108, 10, p. 103504

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  46. Published

    Photoluminescence of InAs0.926Sb0.063N0.011/InAs multi-quantum wells in the mid-infrared spectral range.

    de la Mare, M., Carrington, P. J., Wheatley, R., Zhuang, Q., Beanland, R., Sanchez, A. M., Krier, A. & EPSRC Studentship for MDLM (Funder), 1/09/2010, In: Journal of Physics D: Applied Physics. 43, 34, p. 345103

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  47. Published

    Hot electron transport and impact ionization in the narrow energy gap InAs1-xNx alloy.

    Makarovsky, O., Feu, W. H. M., Patane, A., Eaves, L., Zhuang, Q. D., Krier, A., Beanland, R. & Airey, R., 1/02/2010, In: Applied Physics Letters. 96, 5, p. 052115

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  48. 2009
  49. Published

    Photoluminescence properties of midinfrared dilute nitride InAsN epilayers with/without Sb flux during molecular beam epitaxial growth.

    Chen, R., Phann, S., Sun, H. D., Zhuang, Q., Godenir, A. M. R. & Krier, A., 28/12/2009, In: Applied Physics Letters. 95, 26, p. 261905

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  50. Published

    Molecular beam epitaxial (MBE) growth and spectroscopy of dilute nitride InAsN:Sb for mid-infrared applications.

    Zhuang, Q. & Krier, A., 15/12/2009, In: IET Optoelectronics. 3, 6, p. 248-258 11 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  51. Published

    Mid-infrared GaInSb/AlGaInSb quantum well laser diodes

    Nash, G. R., Przeslak, S. J. B., Smith, S. J., De Valicourt, G., Andreev, A. D., Carrington, P. J., Yin, M., Krier, A., Coomber, S. D., Buckle, L., Emeny, M. T. & Ashley, T., 1/12/2009, Conference on Lasers and Electro-Optics, CLEO 2009.

    Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review

  52. Published

    Mid-infrared GaInSb/AlGaInSb quantum well laser diodes

    Nash, G. R., Przeslak, S. J. B., Smith, S. J., De Valicourt, G., Andreev, A. D., Carrington, P. J., Yin, M., Krier, A., Coomber, S. D., Buckle, L., Emeny, M. T. & Ashley, T., 16/11/2009, 2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009. 5226114

    Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review

  53. Published

    Effect of low nitrogen concentrations on the electronic properties of InAs1-xNx.

    Patane, A., Feu, W. H. M., Makarovsky, O., Drachenko, O., Eaves, L., Krier, A., Zhuang, Q. D., Helm, M., Goiran, M. & Hill, G., 16/09/2009, In: Physical review B. 80, 11, p. 115207

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  54. Published

    Growth and characterization of InAsN/GaAs dilute nitride semiconductor alloys for the midinfrared spectral range.

    de la Mare, M., Zhuang, Q., Krier, A., Patane, A. & Dhar, S., 22/07/2009, In: Applied Physics Letters. 95, 3, p. 031110

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  55. Published

    Midinfrared electroluminescence from pentanary-quaternary heterojunction light-emitting diodes.

    Cook, N. B. & Krier, A., 13/07/2009, In: Applied Physics Letters. 95, 2, p. 021110

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  56. Published

    Temperature dependence of mid-infrared electroluminescence in type II InAsSb/InAs multi-quantum well light-emitting diodes.

    Carrington, P. J., Zhuang, Q., Yin, M. & Krier, A., 07/2009, In: Semiconductor Science and Technology. 24, 7, p. 075001

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  57. Published

    Photoreflectance study of the energy gap and spin-orbit splitting in InNAs alloys.

    Kudrawiec, R., Misiewicz, J., Zhuang, Q., Godenir, A. M. R. & Krier, A., 14/04/2009, In: Applied Physics Letters. 94, 15, p. 151902

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

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