• Published

  ULTRARAM: A Low-Energy, High-Endurance, Compound-Semiconductor Memory on Silicon

  Hodgson, P., Lane, D., Carrington, P., Delli, E., Beanland, R. & Hayne, M., 30/04/2022, In: Advanced Electronic Materials. 8, 4, 9 p., 2101103.

  Research output: Contribution to Journal/Magazine › Journal article › peer-review

• Published

  Simulations of resonant tunnelling through InAs/AlSb heterostructures for ULTRARAM™ memory

  Lane, D. & Hayne, M., 22/06/2021, In: Journal of Physics D: Applied Physics. 54, 35, 7 p., 335104.

  Research output: Contribution to Journal/Magazine › Journal article › peer-review

• Published

  ULTRARAM: toward the development of a III-V semiconductor, non-volatile, random-access memory

  Lane, D., Hodgson, P., Potter, R., Beanland, R. & Hayne, M., 31/05/2021, In: IEEE Transactions on Electron Devices. 68, 5, p. 2271-2274 4 p.

  Research output: Contribution to Journal/Magazine › Journal article › peer-review

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