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Professor Manus Hayne SFHEA

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  1. 2020
  2. Published

    A detailed comparison of measured and simulated optical properties of a short-period GaAs/AlxGa1-xAs distributed Bragg reflector

    Wilson, T., Hodgson, P., Robson, A., Jackson, C., Grew, B. & Hayne, M., 25/03/2020, In: Semiconductor Science and Technology. 35, 5, 6 p., 055003.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  3. Published

    IMPROVEMENTS RELATING TO ELECTRONIC MEMORY DEVICES

    Lane, D. & Hayne, M., 3/12/2020, IPC No. G11C 16/04 2006.01, Patent No. WO/2020/240186, 28/05/2020

    Research output: Patent

  4. 2021
  5. Published

    Demonstration of a Fast, Low-Voltage, III-V Semiconductor, Non-Volatile Memory

    Lane, D., Hodgson, P., Potter, R. & Hayne, M., 12/05/2021, 2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM). IEEE, p. 1-3 3 p.

    Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review

  6. Published

    ULTRARAM: toward the development of a III-V semiconductor, non-volatile, random-access memory

    Lane, D., Hodgson, P., Potter, R., Beanland, R. & Hayne, M., 31/05/2021, In: IEEE Transactions on Electron Devices. 68, 5, p. 2271-2274 4 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  7. Published

    Simulations of resonant tunnelling through InAs/AlSb heterostructures for ULTRARAM™ memory

    Lane, D. & Hayne, M., 22/06/2021, In: Journal of Physics D: Applied Physics. 54, 35, 7 p., 335104.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  8. 2022
  9. Published

    ULTRARAM: A Low-Energy, High-Endurance, Compound-Semiconductor Memory on Silicon

    Hodgson, P., Lane, D., Carrington, P., Delli, E., Beanland, R. & Hayne, M., 30/04/2022, In: Advanced Electronic Materials. 8, 4, 9 p., 2101103.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  10. 2023
  11. Published

    Defect formation in InGaAs/AlSb/InAs memory devices

    Trevisan, A., Hodgson, P., Lane, D., Hayne, M. & Koenraad, P. M., 25/05/2023, In: Journal of Vacuum Science and Technology B. 41, 4, 044001.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

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