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Professor Manus Hayne SFHEA

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  1. Published

    GaSb quantum dot morphology for different growth temperatures and the dissolution effect of the GaAs capping layer.

    Ahmad Kamarudin, M., Hayne, M., Zhuang, Q. D., Kolosov, O., Nuytten, T., Moshchalkov, V. V. & Dinelli, F., 26/01/2010, In: Journal of Physics D: Applied Physics. 43, 6, p. 065402

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  2. Published

    Electronic structure of long wavelength (> 1.3 mu m) GaAsSb-capped InAs quantum dots

    Badcock, T. J., Hayne, M., Hopkinson, M., Jantsch, W., Liu, H. Y., Moshchalkov, V. V., Mowbray, D. J., Nabavi, E., Nuytten, T., Schaffler, F. & Steer, M. J., 10/04/2007, Physics of Semiconductors, Pts A and B. American Institute of Physics, Vol. 893. p. 951-952 2 p.

    Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Chapter

  3. Published

    Excitonic Mott transition in type-II quantum dots.

    Bansal, B., Hayne, M., Geller, M., Bimberg, D. & Moshchalkov, V., 13/06/2008, In: Physical review B. 77, 4 p., 241304(R).

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  4. Published

    Magnetic field-dependent photoluminescence linewidths as a probe of disorder length scales in quantum wells.

    Bansal, B., Hayne, M., Arora, B. A. & Moshchalkov, V. V., 17/12/2007, In: Applied Physics Letters. 91, 25, 251108.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  5. Published

    Extended excitons and compact heliumlike biexcitons in type-II quantum dots.

    Bansal, B., Godefroo, S., Hayne, M., Medeiros-Ribeiro, G. & Moshchalkov, V., 18/11/2009, In: Physical review B. 80, 20, 205137.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  6. Published

    Long-Wavelength Photoluminescence from Stacked Layers of High-Quality Type-II GaSb/GaAs Quantum Rings

    Carrington, P. J., Young, R. J., Hodgson, P. D., Sanchez, A. M., Hayne, M. & Krier, A., 03/2013, In: Crystal Growth and Design. 13, 3, p. 1226-1230 5 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  7. Published

    Phonon bottleneck in GaAs/AlxGa1-xAs quantum dots

    Chang, Y-C., Robson, A., Harrison, S., Zhuang, Q. & Hayne, M., 22/06/2015, In: AIP Advances. 5, 6, 6 p., 067141.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  8. Published

    Control of complex quantum structures in droplet epitaxy

    Chawner, J. M. A., Chang, Y., Hodgson, P. D., Hayne, M., Robson, A. J., Sanchez, A. M. & Zhuang, Q., 13/08/2019, In: Semiconductor Science and Technology. 34, 9, 7 p., 095011.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  9. Published

    Effective masses in high-mobility 2D electron gas structures

    Coleridge, P. T., Hayne, M., Zawadzki, P. & Sachrajda, A. S., 20/07/1996, In: Surface Science. 362, 1-3, p. 560-563 4 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  10. Published

    Impact of the capping layers on lateral confinement in InAs/InP quantum dots for 1.55 um laser applications srudied by magneto-photoluminescence.

    Cornet, C., Levallois, C., Caroff, P., Folliot, H., Labbé, C., Even, J., Le Corre, A., Loualiche, S., Hayne, M. & Moshchalkov, V. V., 30/11/2005, In: Applied Physics Letters. 87, 23, p. - 3 p., 233111.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

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