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Dr Sunanda Dhar

Formerly at Lancaster University

  1. 2008
  2. Published

    Properties of dilute InAsN layers grown by liquid phase epitaxy.

    Dhar, S., Das, T. D., de la Mare, M. & Krier, A., 22/08/2008, In : Applied Physics Letters. 93, 7, p. 071905

    Research output: Contribution to journalJournal article

  3. 2009
  4. Published

    Growth and characterization of InAsN/GaAs dilute nitride semiconductor alloys for the midinfrared spectral range.

    de la Mare, M., Zhuang, Q., Krier, A., Patane, A. & Dhar, S., 22/07/2009, In : Applied Physics Letters. 95, 3, p. 031110

    Research output: Contribution to journalJournal article

  5. 2011
  6. Published

    N incorporation and photoluminescence in In-rich InGaAsN grown on InAs by liquid phase epitaxy

    de la Mare, M., Das, S. C., Das, T. D., Dhar, S. & Krier, A., 10/08/2011, In : Journal of Physics D: Applied Physics. 44, 31, p. - 7 p., 315102.

    Research output: Contribution to journalJournal article

  7. 2012
  8. Published

    Near infrared photoluminescence observed in dilute GaSbBi alloys grown by liquid phase epitaxy

    Das, S. K., Das, T. D., Dhar, S., de la Mare, M. & Krier, A., 01/2012, In : Infrared Physics and Technology. 55, 1, p. 156-160 5 p.

    Research output: Contribution to journalJournal article

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