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Dr Sunanda Dhar

Formerly at Lancaster University

  1. Published

    Growth and characterization of InAsN/GaAs dilute nitride semiconductor alloys for the midinfrared spectral range.

    de la Mare, M., Zhuang, Q., Krier, A., Patane, A. & Dhar, S., 22/07/2009, In: Applied Physics Letters. 95, 3, p. 031110

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

  2. Published

    N incorporation and photoluminescence in In-rich InGaAsN grown on InAs by liquid phase epitaxy

    de la Mare, M., Das, S. C., Das, T. D., Dhar, S. & Krier, A., 10/08/2011, In: Journal of Physics D: Applied Physics. 44, 31, p. - 7 p., 315102.

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

  3. Published

    Near infrared photoluminescence observed in dilute GaSbBi alloys grown by liquid phase epitaxy

    Das, S. K., Das, T. D., Dhar, S., de la Mare, M. & Krier, A., 01/2012, In: Infrared Physics and Technology. 55, 1, p. 156-160 5 p.

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

  4. Published

    Properties of dilute InAsN layers grown by liquid phase epitaxy.

    Dhar, S., Das, T. D., de la Mare, M. & Krier, A., 22/08/2008, In: Applied Physics Letters. 93, 7, p. 071905

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

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