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    Rights statement: Copyright 2014 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics, 116 (13), 2014 and may be found at http://scitation.aip.org/content/aip/journal/jap/116/13/10.1063/1.4895493

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Nanothermal characterization of amorphous and crystalline phases in chalcogenide thin films with scanning thermal microscopy

Research output: Contribution to Journal/MagazineJournal articlepeer-review

Published
Article number134904
<mark>Journal publication date</mark>7/10/2014
<mark>Journal</mark>Journal of Applied Physics
Issue number13
Volume116
Number of pages8
Publication StatusPublished
<mark>Original language</mark>English

Abstract

The thermal properties of amorphous and crystalline phases in chalcogenide phase change materials (PCM) play a key role in device performance for non-volatile random-access memory. Here, we report the nanothermal morphology of amorphous and crystalline phases in laser pulsed GeTe and Ge2Sb2Te5 thin films by scanning thermal microscopy (SThM). By SThM measurements and quantitative finite element analysis simulations of two film thicknesses, the PCM thermal conductivities and thermal boundary conductances between the PCM and SThM probe are independently estimated for the amorphous and crystalline phase of each stoichiometry.

Bibliographic note

Copyright 2014 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics, 116 (13), 2014 and may be found at http://scitation.aip.org/content/aip/journal/jap/116/13/10.1063/1.4895493