Research output: Contribution to Journal/Magazine › Journal article › peer-review
<mark>Journal publication date</mark> | 04/2003 |
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<mark>Journal</mark> | Journal of Crystal Growth |
Issue number | 1-4 |
Volume | 251 |
Number of pages | 6 |
Pages (from-to) | 186-191 |
Publication Status | Published |
<mark>Original language</mark> | English |
We have investigated the formation of InAs quantum dots grown by molecular beam epitaxy on GaAs substrates with different orientations using photoluminescence spectroscopy in pulsed magnetic fields (< 50 T). On increasing the amount of InAs deposited on (1 0 0)-oriented GaAs to 1.6 monolayer (ML), an abrupt change from one-dimensional to three-dimensional charge confinement is observed. For substrates cleaved along the (3 1 1)B plane, the charge confinement is found to be much weaker and gradually increases with the amount of InAs. At the highest coverage studied (1.9 ML), the quantum-dot confinement is equally effective for both substrate orientations.