Research output: Contribution to Journal/Magazine › Journal article › peer-review
| <mark>Journal publication date</mark> | 04/2007 |
|---|---|
| <mark>Journal</mark> | physica status solidi (a) |
| Issue number | 4 |
| Volume | 204 |
| Number of pages | 4 |
| Pages (from-to) | 1047-1050 |
| Publication Status | Published |
| <mark>Original language</mark> | English |
GaInAsPSb is a new narrow gap semiconductor material which is suitable for the fabrication of semiconductor light sources for the mid-infrared spectral range. Photoluminescence emission spectra from GaInAsPSb grown by LPE and lattice-matched onto GaSb substrates were investigated. Homojunction p-i-n light-emitting diodes in this pentenary alloy were fabricated and electroluminescence peaking near 4.0 mu m at room temperature was observed. (c) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.