Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review
Publication date | 2007 |
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Host publication | 2007 International Conference on Indium Phosphide and Related Materials, Conference Proceedings |
Place of Publication | New York |
Publisher | IEEE |
Pages | 81-83 |
Number of pages | 3 |
ISBN (print) | 978-1-4244-0874-0 |
<mark>Original language</mark> | English |
Event | 19th International Conference on Indium Phosphide and Related Materials - Matsue Duration: 14/05/2007 → 18/05/2007 |
Conference | 19th International Conference on Indium Phosphide and Related Materials |
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City | Matsue |
Period | 14/05/07 → 18/05/07 |
Conference | 19th International Conference on Indium Phosphide and Related Materials |
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City | Matsue |
Period | 14/05/07 → 18/05/07 |
Excess noise factors < 4 at avalanche gain of 10 measured on a series of p(+)in(+) InAlAs diodes with avalanche regions ranging from 0.11 mu m to 2.53 mu m. Extremely low excess noise, corresponding to effective ionization coefficient ratios, k, of 0.15 < k < 0.25, showed the potential of InAlAs as multiplication region for avalanche photodiodes. Breakdown voltage obtained from multiplication characteristics of these diodes showed a linear dependence of breakdown voltage on the avalanche width. Using tunnelling parameters derived from current-voltage' measurements with the ionization coefficients and threshold energies derived from gain and excess noise measurements, our calculations showed that InAlAs avalanche photodiodes have sensitivities of similar to 28.8dBm assuming a rather high pre-amplifier noise of 15pAHz(-1/2).