Research output: Contribution to Journal/Magazine › Journal article › peer-review
| Article number | 094009 |
|---|---|
| <mark>Journal publication date</mark> | 09/2012 |
| <mark>Journal</mark> | Semiconductor Science and Technology |
| Issue number | 9 |
| Volume | 27 |
| Number of pages | 8 |
| Publication Status | Published |
| <mark>Original language</mark> | English |
The development of dilute nitride alloys for use in mid-infrared diode lasers operating in the 3-4 mu m spectral range is described. The dilute nitrides are found to offer improved temperature stability of the photon emission. This arises from localization effects and reduced non-radiative Auger recombination.