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Tunnel spectroscopy of small Al particle

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Published
  • Youiti Ootuka
  • Teppei Kurosawa
  • Akinobu Kanda
  • Yuri Pashkin
  • Jaw Shen Tsai
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<mark>Journal publication date</mark>05/2003
<mark>Journal</mark>Physica E: Low-dimensional Systems and Nanostructures
Issue number1-3
Volume18
Number of pages2
Pages (from-to)19-20
Publication StatusPublished
Early online date15/02/03
<mark>Original language</mark>English

Abstract

We present experimental results of the current-voltage characteristics of a lithographically made single-electron transistor with 10 nm island. We find a stepwise current increase above the threshold voltage, which is attributed to the discrete energy levels in the island. The distribution of level spacing has a tendency that supports the level repulsion effect. ?? 2003 Elsevier Science B.V. All rights reserved.