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Semiconductor-based THz plasmonic metamaterial

Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review

Published
Publication date2013
Host publicationMillimeter Waves and THz Technology Workshop (UCMMT), 2013 6th UK, Europe, China
Place of PublicationPiscataway, N.J.
PublisherIEEE
Number of pages2
<mark>Original language</mark>English
EventUCMMT 2013 - Rome, United Kingdom
Duration: 9/09/2013 → 11/09/2013

Conference

ConferenceUCMMT 2013
Country/TerritoryUnited Kingdom
CityRome
Period9/09/13 → 11/09/13

Conference

ConferenceUCMMT 2013
Country/TerritoryUnited Kingdom
CityRome
Period9/09/13 → 11/09/13

Abstract

A new metamaterial (MTM) for THz range applications is proposed. The unit cell consists of indium antimonide (InSb) and silicon (Si) single-layered fishnet MTM. The InSb-based MTM shows enhanced resonance in the THz band and can be efficiently tuned by changing doping level of the semiconductor