Research output: Contribution to Journal/Magazine › Journal article › peer-review
| <mark>Journal publication date</mark> | 11/2012 |
|---|---|
| <mark>Journal</mark> | IEEE Journal of Quantum Electronics |
| Issue number | 11 |
| Volume | 48 |
| Number of pages | 9 |
| Pages (from-to) | 1467-1475 |
| Publication Status | Published |
| <mark>Original language</mark> | English |
Sub 10 ps photocarrier response time in an electroabsoption modulator using a custom epitaxy structure is demonstrated. This design used quantum well offsetting, carbon doping, and valence band discontinuity minimization, to achieve a 3.5 ps response time, when biased at -4.5 V. The quantum well offsetting also allows bandwidth optimization for a specific extinction ratio.