Research output: Contribution to Journal/Magazine › Journal article › peer-review
<mark>Journal publication date</mark> | 12/2006 |
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<mark>Journal</mark> | Physica Status Solidi C |
Issue number | 11 |
Volume | 3 |
Number of pages | 4 |
Pages (from-to) | 4039-4042 |
Publication Status | Published |
Early online date | 6/11/06 |
<mark>Original language</mark> | English |
We report a brief overview of recent research developments on InAs/InP quantum dots (QDs). Eight-band k-p calculations are performed on single InAs/InP QDs, and the impact of substrate orientation ((311)B or (100)) on electronic and optical properties is studied. A configuration interaction model is used to determine few-particle states of these dots and a comparison with micro-photoluminescence experiments on single InAs/InP QDs is made. It is then demonstrated that high QDs density can be reached on such a system, leading to lateral coupling between dots. Calculations and (magnetophoto-) (photo-) (electro-) luminescence experiments are used to demonstrate that the lateral coupling leads to miniband effects, and to a better charge carrier redistribution between QDs for laser applications. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.