Research output: Contribution to Journal/Magazine › Journal article › peer-review
| <mark>Journal publication date</mark> | 2013 |
|---|---|
| <mark>Journal</mark> | AIP Conference Proceedings |
| Volume | 1566 |
| Number of pages | 2 |
| Pages (from-to) | 111-112 |
| Publication Status | Published |
| <mark>Original language</mark> | English |
| Event | 31st International Conference on the Physics of Semiconductors (ICPS) - Zurich, Switzerland Duration: 29/07/2012 → 3/08/2012 |
| Conference | 31st International Conference on the Physics of Semiconductors (ICPS) |
|---|---|
| Country/Territory | Switzerland |
| Period | 29/07/12 → 3/08/12 |
We report the room temperature operation of a quasi-ballistic InSb quantum well Hall sensor that exhibits a high frequency sensitivity of 560nT/root Hz at 20uA bias current. The device utilizes a partitioned buffer layer design that suppresses leakage currents through the mesa floor and can sustain large current densities.