Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review
Publication date | 2007 |
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Host publication | Quantum Sensing and Nanophotonic Devices IV |
Editors | M Razeghi, GJ Brown |
Place of Publication | BELLINGHAM |
Publisher | SPIE-INT SOC OPTICAL ENGINEERING |
Pages | 47918-47918 |
Number of pages | 8 |
ISBN (print) | 978-0-8194-6592-4 |
<mark>Original language</mark> | English |
Event | Conference on Quantum Sensing and Nanophotonic Devices IV - San Jose Duration: 22/01/2007 → 25/01/2007 |
Conference | Conference on Quantum Sensing and Nanophotonic Devices IV |
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City | San Jose |
Period | 22/01/07 → 25/01/07 |
Conference | Conference on Quantum Sensing and Nanophotonic Devices IV |
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City | San Jose |
Period | 22/01/07 → 25/01/07 |
GaInAsPSb is a new narrow gap semiconductor material, which is suitable for the fabrication of semiconductor light sources for the mid-infrared spectral range. Unique physical properties of the alloy are discussed and its advantages for mid-infrared optoelectronic devices are considered. Liquid phase epitaxy (LPE) growth conditions for GaInAsPSb homogeneous high crystal quality layers lattice-matched onto GaSb substrates were determined. Spectra of photoluminescence (PL) emission were investigated. Homejunction p-i-n light-emitting diodes (LEDs) based on this pentenary alloy were fabricated and electroluminescence (EL) peaking near 4.0 mu m at room temperature was observed.