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Air-Stable Solution-Processed Hybrid Transistors with Hole and Electron Mobilities Exceeding 2 cm(2) V-1 s(-1)

Research output: Contribution to Journal/MagazineJournal articlepeer-review

Published
  • Jeremy Smith
  • Aneeqa Bashir
  • George Adamopoulos
  • John E. Anthony
  • Donal D. C. Bradley
  • R. Hamilton
  • Martin Heeney
  • Iain McCulloch
  • Thomas D. Anthopoulos
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<mark>Journal publication date</mark>24/08/2010
<mark>Journal</mark>Advanced Materials
Issue number32
Volume22
Number of pages5
Pages (from-to)3598-3602
Publication StatusPublished
<mark>Original language</mark>English

Abstract

An alternative approach for the development of high-performance unipolar and ambipolar thin-film transistors and integrated circuits based on hybrid heterostructures comprising a phase-separated solution processed p-type organic small-molecule:polymer semicondcutor blend and a spray-coated n-type ZnO semiconductor layer is demonstrated.