Research output: Contribution to Journal/Magazine › Journal article › peer-review
| Article number | 223121 |
|---|---|
| <mark>Journal publication date</mark> | 1/06/2009 |
| <mark>Journal</mark> | Applied Physics Letters |
| Issue number | 22 |
| Volume | 94 |
| Number of pages | 3 |
| Pages (from-to) | - |
| Publication Status | Published |
| <mark>Original language</mark> | English |
In this letter we report on the optical properties of site-controlled InGaAs quantum dots with GaAs barriers grown in pyramidal recesses by metalorganic vapor phase epitaxy. The inhomogeneous broadening of excitonic emission from an ensemble of quantum dots is found to be unusually narrow, with a standard deviation of 1.19 meV and the spectral purity of emission lines from individual dots is found to be very high (18-30 mu eV), in contrast with other site-controlled dot systems.