Final published version
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Article number | 305104 |
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<mark>Journal publication date</mark> | 31/07/2013 |
<mark>Journal</mark> | Journal of Physics D: Applied Physics |
Issue number | 30 |
Volume | 46 |
Number of pages | 6 |
Publication Status | Published |
<mark>Original language</mark> | English |
The effects of rapid thermal annealing on the photoluminescence emission obtained from ten-layer stacks of GaSb/GaAs type-II single monolayer quantum dots and Stranski-Krastanow grown quantum rings have been studied and interpreted. Post-growth rapid thermal annealing was performed with proximity capping at temperatures from 550 degrees C to 800 degrees C, resulting in an increase in photoluminescence emission intensity and a blue shift in peak energy in both types of stacks, together with changes in the activation energy for thermal quenching. This behaviour originates from Sb-As intermixing and changes in morphology of the nanostructures formed using the two different growth mechanisms.