Home > Research > Publications & Outputs > Environment-Assisted Tunneling as an Origin of ...

Associated organisational unit

View graph of relations

Environment-Assisted Tunneling as an Origin of the Dynes Density of States

Research output: Contribution to Journal/MagazineJournal articlepeer-review

Published
Close
Article number026803
<mark>Journal publication date</mark>6/07/2010
<mark>Journal</mark>Physical review letters
Issue number2
Volume105
Number of pages4
Pages (from-to)-
Publication StatusPublished
<mark>Original language</mark>English

Abstract

We show that the effect of a high-temperature environment in current transport through a normal metal-insulator-superconductor tunnel junction can be described by an effective density of states in the superconductor. In the limit of a resistive low-Ohmic environment, this density of states reduces into the well-known Dynes form. Our theoretical result is supported by experiments in engineered environments. We apply our findings to improve the performance of a single-electron turnstile, a potential candidate for a metrological current source.