We report on a suspension technique for Al doubly clamped beams. The technique is based on two consecutive reactive ion etching processes in CF4 plasma, anisotropic and isotropic, of SiO (x) on which Al layer is deposited. With this technique, Al doubly clamped beams were fabricated. One of the beams was characterized using a magnetomotive measurement scheme at low temperatures. The developed suspension technique is suitable for the fabrication of Al nanoelectronic devices with a mechanical degree of freedom, in particular, superconducting flux qubits with partly suspended loops.