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    Rights statement: Copyright 2015 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 106 (20), 2015 and may be found at http://scitation.aip.org/content/aip/journal/apl/106/20/10.1063/1.4921468

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Short-wave infrared barriode detectors using InGaAsSb absorption material lattice matched to GaSb

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Article number201103
<mark>Journal publication date</mark>20/05/2015
<mark>Journal</mark>Applied Physics Letters
Issue number20
Volume106
Number of pages5
Publication StatusPublished
<mark>Original language</mark>English

Abstract

Short-wave infrared barriode detectors were grown by molecular beam epitaxy. An absorption layer composition of In0.28Ga0.72As0.25Sb0.75 allowed for lattice matching to GaSb and cut-off wavelengths of 2.9 μm at 250 K and 3.0 μm at room temperature. Arrhenius plots of the dark current density showed diffusion limited dark currents approaching those expected for optimized HgCdTe-based detectors. Specific detectivity figures of around 7×1010 Jones and 1×1010 Jones were calculated, for 240 K and room temperature, respectively. Significantly, these devices could support focal plane arrays working at higher operating temperatures.

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Copyright 2015 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 106 (20), 2015 and may be found at http://scitation.aip.org/content/aip/journal/apl/106/20/10.1063/1.4921468