Research output: Contribution to Journal/Magazine › Journal article › peer-review
| <mark>Journal publication date</mark> | 26/04/2011 |
|---|---|
| <mark>Journal</mark> | Advanced Materials |
| Issue number | 16 |
| Volume | 23 |
| Number of pages | 5 |
| Pages (from-to) | 1894-1898 |
| Publication Status | Published |
| <mark>Original language</mark> | English |
Sequential layers of the high-k dielectric ZrO2 and the electron transporting semiconductors ZnO and Li-doped ZnO are deposited onto conductive indium tin oxide electrodes using spray pyrolysis. With these structures, thin-film transistors are fabricated with operating voltages below 6 V and maximum electron mobilities on the order of 85 cm(2) V-1 s(-1).