Research output: Contribution to Journal/Magazine › Journal article › peer-review
<mark>Journal publication date</mark> | 15/10/2010 |
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<mark>Journal</mark> | Journal of Crystal Growth |
Issue number | 21 |
Volume | 312 |
Number of pages | 6 |
Pages (from-to) | 3057-3062 |
Publication Status | Published |
<mark>Original language</mark> | English |
We present in this work a simple quantum well (QW) structure consisting of GaAs wells with AlGaAs barriers as a probe for measuring the performance of arsine purifiers within a metalorganic vapour phase epitaxy system. Comparisons between two different commercially available purifiers are based on the analysis of low-temperature photoluminescence emission spectra from thick QWs, grown on GaAs substrates misoriented slightly from (1 0 0). Neutral excitons emitted from these structures show extremely narrow linewidths, comparable with those that can be obtained by molecular beam epitaxy in an ultra-high vacuum environment, suggesting that purifications well below the 1 ppb level are needed to achieve high quality quantum well growth. (C) 2010 Elsevier B.V. All rights reserved.