Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review
| Publication date | 2010 |
|---|---|
| Host publication | 2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM) |
| Place of Publication | New York |
| Publisher | IEEE |
| Pages | - |
| Number of pages | 4 |
| ISBN (print) | 978-1-4244-5920-9 |
| <mark>Original language</mark> | English |
| Event | 22nd International Conference on Indium Phosphide and Related Materials - Kagawa Duration: 31/05/2010 → 4/06/2010 |
| Conference | 22nd International Conference on Indium Phosphide and Related Materials |
|---|---|
| City | Kagawa |
| Period | 31/05/10 → 4/06/10 |
| Conference | 22nd International Conference on Indium Phosphide and Related Materials |
|---|---|
| City | Kagawa |
| Period | 31/05/10 → 4/06/10 |
We report the avalanche properties of InAs avalanche photodiodes (APDs), extracted from avalanche gain and excess noise measurements performed under pure electron and pure hole injections, and from Monte Carlo simulations. For a given avalanche width electron initiated gain was found to be significantly higher than conventional InP and Si APDs. Hole initiated multiplication was negligible confirming the electron only multiplication process within the field range covered. Excess noise measurements showed the excess noise factors of less than 2, providing further evidence of the ideal avalanche properties in InAs. Monte Carlo simulations performed provided good agreement to experimental results.