The advances in the development of metal oxide semiconductors that demonstrated with high optical transparency, high carrier mobilities, excellent mechanical properties and compatibility with organic materials, make them ideal candidates for applications in large-area electronics. Nevertheless, those high-performance metal oxide-based TFTs are usually manufactured using costly vacuum-based techniques. To address this issue, recent research has been focused on the development of TFTs using alternative deposition methods based on solutions. Thus this talk will present the current state-of-the-art of metal oxide-based electronics processed from solutions. More precisely, the methodology as well as the role of the deposition conditions in respect to both nMOS and pMOS operating characteristics will be discussed. We will focus in particular to the dielectric’s choice and properties for high performance metal oxide-based electronics for displays applications.