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    Rights statement: © CERN 2016, published under the terms of the Creative Commons Attribution 3.0 License by IOP Publishing Ltd and Sissa Medialab srl. Any further distribution of this work must maintain attribution to the author(s) and the published article’s title, journal citation and DOI.

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Radiation hardness studies of neutron irradiated CMOS sensors fabricated in the ams H18 high voltage process

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Article numberP02016
<mark>Journal publication date</mark>26/02/2016
<mark>Journal</mark>Journal of Instrumentation
Volume11
Number of pages12
Publication StatusPublished
<mark>Original language</mark>English

Abstract

High voltage CMOS detectors (HVCMOSv3), fabricated in the ams H18 high voltage process, with a substrate resistivity of 10 Ω·cm were irradiated with neutrons up to a fluence of 2×1016 neq/cm2
and characterized using edge-TCT. It was found that, within the measured fluence range, the active region and the collected charge reach a maximum at about 7×1015 neq/cm2 to decrease to the level of the unirradiated detector after 2×1016 neq/cm2.

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© CERN 2016, published under the terms of the Creative Commons Attribution 3.0 License by IOP Publishing Ltd and Sissa Medialab srl. Any further distribution of this work must maintain attribution to the author(s) and the published article’s title, journal citation and DOI.