Research output: Contribution to Journal/Magazine › Journal article › peer-review
<mark>Journal publication date</mark> | 2007 |
---|---|
<mark>Journal</mark> | IEEE Journal of Quantum Electronics |
Issue number | 5-6 |
Volume | 43 |
Number of pages | 5 |
Pages (from-to) | 503-507 |
Publication Status | Published |
<mark>Original language</mark> | English |
Avalanche multiplication and excess noise arising from both electron and hole injection have been measured on a series of In0.52Al0.48As p(+)-i-n(+) and n(+)-i-p(+) diodes with nominal avalanche region widths between 0.1 and 2.5 mu m. With pure electron injection, low excess noise was measured at values corresponding to effective kappa = ss/alpha between 0.15 and 0.25 for all widths. Enabled ionization coefficients were deduced using a non-local ionization model utilizing recurrence equation techniques covering an electric field range from approximately 200 kV/cm to 1 MV/cm.