Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review
| Publication date | 2008 |
|---|---|
| Host publication | NARROW GAP SEMICONDUCTORS 2007 |
| Editors | BN Murdin, S Clowes |
| Place of Publication | DORDRECHT |
| Publisher | Springer |
| Pages | 129-131 |
| Number of pages | 3 |
| ISBN (print) | 978-1-4020-8424-9 |
| <mark>Original language</mark> | English |
| Event | 13th International Conference on Narrow Gap Semiconductors - Guildford Duration: 8/07/2007 → 12/07/2007 |
| Conference | 13th International Conference on Narrow Gap Semiconductors |
|---|---|
| City | Guildford |
| Period | 8/07/07 → 12/07/07 |
| Conference | 13th International Conference on Narrow Gap Semiconductors |
|---|---|
| City | Guildford |
| Period | 8/07/07 → 12/07/07 |
We report the molecular beam epitaxial growth of InSb sub-monolayers inserted in an InAs matrix using Sb-2 and AS(2) fluxes. The InSb/InAs nanostructures exhibit intense mid-infrared photoluminescence up to room temperature. The nominal thickness of the sub-monolayer insertions can be controlled by the growth temperature (T-Gr = 450-320 degrees C) which gives rise to the variation of the emission wavelength within the 3.6-4.0 mu m range at room temperature. A comparative analysis of the optical properties of the structures grown using (Sb-2,AS(2)) and (Sb-4,AS(4)) is also presented.