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A comparison of the lower limit of multiplication noise in InP and InAlAs based APDs for telecommunications receiver applications.

Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review

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A comparison of the lower limit of multiplication noise in InP and InAlAs based APDs for telecommunications receiver applications. / Marshall, A. R. J.; Goh, Y. L.; Tan, L. J. J. et al.
2006 IEEE LEOS Annual Meeting Conference Proceedings, Vols 1 and 2. New York: IEEE, 2006. p. 789-790.

Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review

Harvard

Marshall, ARJ, Goh, YL, Tan, LJJ, Tan, CH, Ng, JS & David, JPR 2006, A comparison of the lower limit of multiplication noise in InP and InAlAs based APDs for telecommunications receiver applications. in 2006 IEEE LEOS Annual Meeting Conference Proceedings, Vols 1 and 2. IEEE, New York, pp. 789-790, 19th Annual Meeting of the IEEE-Lasers-and-Electro-Optics-Society, Montreal, 29/10/06. https://doi.org/10.1109/LEOS.2006.279004

APA

Marshall, A. R. J., Goh, Y. L., Tan, L. J. J., Tan, C. H., Ng, J. S., & David, J. P. R. (2006). A comparison of the lower limit of multiplication noise in InP and InAlAs based APDs for telecommunications receiver applications. In 2006 IEEE LEOS Annual Meeting Conference Proceedings, Vols 1 and 2 (pp. 789-790). IEEE. https://doi.org/10.1109/LEOS.2006.279004

Vancouver

Marshall ARJ, Goh YL, Tan LJJ, Tan CH, Ng JS, David JPR. A comparison of the lower limit of multiplication noise in InP and InAlAs based APDs for telecommunications receiver applications. In 2006 IEEE LEOS Annual Meeting Conference Proceedings, Vols 1 and 2. New York: IEEE. 2006. p. 789-790 doi: 10.1109/LEOS.2006.279004

Author

Marshall, A. R. J. ; Goh, Y. L. ; Tan, L. J. J. et al. / A comparison of the lower limit of multiplication noise in InP and InAlAs based APDs for telecommunications receiver applications. 2006 IEEE LEOS Annual Meeting Conference Proceedings, Vols 1 and 2. New York : IEEE, 2006. pp. 789-790

Bibtex

@inproceedings{25b7545042be438e9756a565c354f665,
title = "A comparison of the lower limit of multiplication noise in InP and InAlAs based APDs for telecommunications receiver applications.",
abstract = "In this work newly derived non-local ionization coefficients covering the required high field range have been used, together with a random path length model, to accurately evaluate multiplication and excess noise in both InP and InAlAs multiplication regions. The multiplication of both the intentionally injected photocurrent and the tunneling current has been modeled. A range of APD multiplication widths have been evaluated and APD performance has been combined with a modeled receiver front end, to interpret the results in terms of receiver sensitivity.",
author = "Marshall, {A. R. J.} and Goh, {Y. L.} and Tan, {L. J. J.} and Tan, {C. H.} and Ng, {J. S.} and David, {J. P. R.}",
year = "2006",
doi = "10.1109/LEOS.2006.279004",
language = "English",
isbn = "978-0-7803-9555-8",
pages = "789--790",
booktitle = "2006 IEEE LEOS Annual Meeting Conference Proceedings, Vols 1 and 2",
publisher = "IEEE",
note = "19th Annual Meeting of the IEEE-Lasers-and-Electro-Optics-Society ; Conference date: 29-10-2006 Through 02-11-2006",

}

RIS

TY - GEN

T1 - A comparison of the lower limit of multiplication noise in InP and InAlAs based APDs for telecommunications receiver applications.

AU - Marshall, A. R. J.

AU - Goh, Y. L.

AU - Tan, L. J. J.

AU - Tan, C. H.

AU - Ng, J. S.

AU - David, J. P. R.

PY - 2006

Y1 - 2006

N2 - In this work newly derived non-local ionization coefficients covering the required high field range have been used, together with a random path length model, to accurately evaluate multiplication and excess noise in both InP and InAlAs multiplication regions. The multiplication of both the intentionally injected photocurrent and the tunneling current has been modeled. A range of APD multiplication widths have been evaluated and APD performance has been combined with a modeled receiver front end, to interpret the results in terms of receiver sensitivity.

AB - In this work newly derived non-local ionization coefficients covering the required high field range have been used, together with a random path length model, to accurately evaluate multiplication and excess noise in both InP and InAlAs multiplication regions. The multiplication of both the intentionally injected photocurrent and the tunneling current has been modeled. A range of APD multiplication widths have been evaluated and APD performance has been combined with a modeled receiver front end, to interpret the results in terms of receiver sensitivity.

U2 - 10.1109/LEOS.2006.279004

DO - 10.1109/LEOS.2006.279004

M3 - Conference contribution/Paper

SN - 978-0-7803-9555-8

SP - 789

EP - 790

BT - 2006 IEEE LEOS Annual Meeting Conference Proceedings, Vols 1 and 2

PB - IEEE

CY - New York

T2 - 19th Annual Meeting of the IEEE-Lasers-and-Electro-Optics-Society

Y2 - 29 October 2006 through 2 November 2006

ER -