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A detailed comparison of measured and simulated optical properties of a short-period GaAs/AlxGa1-xAs distributed Bragg reflector

Research output: Contribution to Journal/Magazine › Journal article › peer-review

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A detailed comparison of measured and simulated optical properties of a short-period GaAs/AlxGa1-xAs distributed Bragg reflector. / Wilson, Tom; Hodgson, Peter; Robson, Alexander et al.
In: Semiconductor Science and Technology, Vol. 35, No. 5, 055003, 25.03.2020.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Wilson, T, Hodgson, P, Robson, A, Jackson, C, Grew, B & Hayne, M 2020, 'A detailed comparison of measured and simulated optical properties of a short-period GaAs/AlxGa1-xAs distributed Bragg reflector', Semiconductor Science and Technology, vol. 35, no. 5, 055003. https://doi.org/10.1088/1361-6641/ab76af

APA

Wilson, T., Hodgson, P., Robson, A., Jackson, C., Grew, B., & Hayne, M. (2020). A detailed comparison of measured and simulated optical properties of a short-period GaAs/AlxGa1-xAs distributed Bragg reflector. Semiconductor Science and Technology, 35(5), Article 055003. https://doi.org/10.1088/1361-6641/ab76af

Vancouver

Wilson T, Hodgson P, Robson A, Jackson C, Grew B, Hayne M. A detailed comparison of measured and simulated optical properties of a short-period GaAs/AlxGa1-xAs distributed Bragg reflector. Semiconductor Science and Technology. 2020 Mar 25;35(5):055003. doi: 10.1088/1361-6641/ab76af

Author

Wilson, Tom ; Hodgson, Peter ; Robson, Alexander et al. / A detailed comparison of measured and simulated optical properties of a short-period GaAs/AlxGa1-xAs distributed Bragg reflector. In: Semiconductor Science and Technology. 2020 ; Vol. 35, No. 5.

Bibtex

@article{9f486dd2126c40e3a349b5d16cd2c214,
title = "A detailed comparison of measured and simulated optical properties of a short-period GaAs/AlxGa1-xAs distributed Bragg reflector",
abstract = "A 6-period GaAs/Al$_{0.9}$Ga$_{0.1}$As distributed Bragg reflector (DBR) has been grown and its optical properties have been both measured and simulated. Incremental improvements were made to the simulation, allowing it to account for internal consistency error, incorrect layer thicknesses, and absorption due to substrate doping to improve simulation accuracy. A compositional depth profile using secondary-ion mass spectrometry (SIMS) has been taken and shows that the Al fraction averages 88.0$\pm0.3\%$. It is found that the amplitude of the transmission is significantly affected by absorption in the n-doped GaAs substrate, even though the energy of the transmitted light is well below the GaAs band gap. The wavelength of the features on the transmission spectrum are mostly affected by DBR layer thicknesses. On the other hand, the transmission spectrum is found to be relatively tolerant to changes to Al fraction.",
keywords = "AlGaAs, distributed Bragg reflector, telecoms, vertical cavity, optical simulation, SIMS, cross section",
author = "Tom Wilson and Peter Hodgson and Alexander Robson and Charles Jackson and Benjamin Grew and Manus Hayne",
year = "2020",
month = mar,
day = "25",
doi = "10.1088/1361-6641/ab76af",
language = "English",
volume = "35",
journal = "Semiconductor Science and Technology",
issn = "0268-1242",
publisher = "Institute of Physics Publishing",
number = "5",

}

RIS

TY - JOUR

T1 - A detailed comparison of measured and simulated optical properties of a short-period GaAs/AlxGa1-xAs distributed Bragg reflector

AU - Wilson, Tom

AU - Hodgson, Peter

AU - Robson, Alexander

AU - Jackson, Charles

AU - Grew, Benjamin

AU - Hayne, Manus

PY - 2020/3/25

Y1 - 2020/3/25

N2 - A 6-period GaAs/Al$_{0.9}$Ga$_{0.1}$As distributed Bragg reflector (DBR) has been grown and its optical properties have been both measured and simulated. Incremental improvements were made to the simulation, allowing it to account for internal consistency error, incorrect layer thicknesses, and absorption due to substrate doping to improve simulation accuracy. A compositional depth profile using secondary-ion mass spectrometry (SIMS) has been taken and shows that the Al fraction averages 88.0$\pm0.3\%$. It is found that the amplitude of the transmission is significantly affected by absorption in the n-doped GaAs substrate, even though the energy of the transmitted light is well below the GaAs band gap. The wavelength of the features on the transmission spectrum are mostly affected by DBR layer thicknesses. On the other hand, the transmission spectrum is found to be relatively tolerant to changes to Al fraction.

AB - A 6-period GaAs/Al$_{0.9}$Ga$_{0.1}$As distributed Bragg reflector (DBR) has been grown and its optical properties have been both measured and simulated. Incremental improvements were made to the simulation, allowing it to account for internal consistency error, incorrect layer thicknesses, and absorption due to substrate doping to improve simulation accuracy. A compositional depth profile using secondary-ion mass spectrometry (SIMS) has been taken and shows that the Al fraction averages 88.0$\pm0.3\%$. It is found that the amplitude of the transmission is significantly affected by absorption in the n-doped GaAs substrate, even though the energy of the transmitted light is well below the GaAs band gap. The wavelength of the features on the transmission spectrum are mostly affected by DBR layer thicknesses. On the other hand, the transmission spectrum is found to be relatively tolerant to changes to Al fraction.

KW - AlGaAs

KW - distributed Bragg reflector

KW - telecoms

KW - vertical cavity

KW - optical simulation

KW - SIMS

KW - cross section

U2 - 10.1088/1361-6641/ab76af

DO - 10.1088/1361-6641/ab76af

M3 - Journal article

VL - 35

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

SN - 0268-1242

IS - 5

M1 - 055003

ER -