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A new mechanism of electric dipole spin resonance: hyperfine coupling in quantum dots

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A new mechanism of electric dipole spin resonance: hyperfine coupling in quantum dots. / Laird, E A; Barthel, C; Rashba, E I et al.
In: Semiconductor Science and Technology, Vol. 24, No. 6, 64004, 19.05.2009.

Research output: Contribution to Journal/Magazine › Journal article

Harvard

Laird, EA, Barthel, C, Rashba, EI, Marcus, CM, Hanson, MP & Gossard, AC 2009, 'A new mechanism of electric dipole spin resonance: hyperfine coupling in quantum dots', Semiconductor Science and Technology, vol. 24, no. 6, 64004. https://doi.org/10.1088/0268-1242/24/6/064004

APA

Laird, E. A., Barthel, C., Rashba, E. I., Marcus, C. M., Hanson, M. P., & Gossard, A. C. (2009). A new mechanism of electric dipole spin resonance: hyperfine coupling in quantum dots. Semiconductor Science and Technology, 24(6), Article 64004. https://doi.org/10.1088/0268-1242/24/6/064004

Vancouver

Laird EA, Barthel C, Rashba EI, Marcus CM, Hanson MP, Gossard AC. A new mechanism of electric dipole spin resonance: hyperfine coupling in quantum dots. Semiconductor Science and Technology. 2009 May 19;24(6):64004. doi: 10.1088/0268-1242/24/6/064004

Author

Laird, E A ; Barthel, C ; Rashba, E I et al. / A new mechanism of electric dipole spin resonance : hyperfine coupling in quantum dots. In: Semiconductor Science and Technology. 2009 ; Vol. 24, No. 6.

Bibtex

@article{d42d7a6670af45d0b962c68f037292d6,
title = "A new mechanism of electric dipole spin resonance: hyperfine coupling in quantum dots",
abstract = "A recently discovered mechanism of electric dipole spin resonance, mediated by the hyperfine interaction, is investigated experimentally and theoretically. The effect is studied using a spin-selective transition in a GaAs double quantum dot. The resonant frequency is sensitive to the instantaneous hyperfine effective field, revealing a nuclear polarization created by driving the resonance. A device incorporating a micromagnet exhibits a magnetic field difference between dots, allowing electrons in either dot to be addressed selectively. An unexplained additional signal at half the resonant frequency is presented.",
keywords = "cond-mat.mes-hall",
author = "Laird, {E A} and C Barthel and Rashba, {E I} and Marcus, {C M} and Hanson, {M P} and Gossard, {A C}",
year = "2009",
month = may,
day = "19",
doi = "10.1088/0268-1242/24/6/064004",
language = "English",
volume = "24",
journal = "Semiconductor Science and Technology",
issn = "0268-1242",
publisher = "Institute of Physics Publishing",
number = "6",

}

RIS

TY - JOUR

T1 - A new mechanism of electric dipole spin resonance

T2 - hyperfine coupling in quantum dots

AU - Laird, E A

AU - Barthel, C

AU - Rashba, E I

AU - Marcus, C M

AU - Hanson, M P

AU - Gossard, A C

PY - 2009/5/19

Y1 - 2009/5/19

N2 - A recently discovered mechanism of electric dipole spin resonance, mediated by the hyperfine interaction, is investigated experimentally and theoretically. The effect is studied using a spin-selective transition in a GaAs double quantum dot. The resonant frequency is sensitive to the instantaneous hyperfine effective field, revealing a nuclear polarization created by driving the resonance. A device incorporating a micromagnet exhibits a magnetic field difference between dots, allowing electrons in either dot to be addressed selectively. An unexplained additional signal at half the resonant frequency is presented.

AB - A recently discovered mechanism of electric dipole spin resonance, mediated by the hyperfine interaction, is investigated experimentally and theoretically. The effect is studied using a spin-selective transition in a GaAs double quantum dot. The resonant frequency is sensitive to the instantaneous hyperfine effective field, revealing a nuclear polarization created by driving the resonance. A device incorporating a micromagnet exhibits a magnetic field difference between dots, allowing electrons in either dot to be addressed selectively. An unexplained additional signal at half the resonant frequency is presented.

KW - cond-mat.mes-hall

U2 - 10.1088/0268-1242/24/6/064004

DO - 10.1088/0268-1242/24/6/064004

M3 - Journal article

VL - 24

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

SN - 0268-1242

IS - 6

M1 - 64004

ER -