A new type of mid-infrared LED module (LEDM) operating at 3.8 mu m is reported. The device was produced using liquid phase epitaxy (LPE) and consists of a series array of four individual LED chips. Electro-optic characteristics of the devices were measured and are reported here. The output power from the module was measured to be as high as 8 mW at room temperature under pulsed drive conditions. Compared with previous results our LED and LEDM devices represent a considerable improvement in output power at 3.8 mu m. The reasons for this improvement are related to the purification techniques used in the LPE growth procedure and the de-tuning of the CHSH Auger resonance in the InAs0.95Sb0.05 alloy which forms the active region. The peak in the electroluminescence emission spectrum was found to be co-incident with the absorption band of H2S gas and as such we were able to demonstrate substantial optical absorption which clearly shows the potential application of such devices in infrared gas sensor instrumentation.