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A practical approach based on a unilateral FET model for the design of a MMIC distributed amplifier

Research output: Contribution to journalJournal article


<mark>Journal publication date</mark>11/1996
<mark>Journal</mark>Microwave and Optical Technology Letters
Issue number4
Number of pages3
Pages (from-to)219-221
<mark>Original language</mark>English


A new formulation for a unilateral FET model suitable for designing MMIC distributed amplifiers (design-oriented FET model) is proposed. The equations describing the FET model are functions of the gate width and ar process independent. A graphic presentation is also proposed to simplify the computation of the circuit elements of the FET model. (C) 1996 John Wiley & Sons, Inc.