Research output: Contribution to journal › Journal article
|<mark>Journal publication date</mark>||03/2000|
|<mark>Journal</mark>||IEEE Transactions on Microwave Theory and Techniques|
|Number of pages||5|
A graphical method to easily derive the power gain definitions of field-effect transistors (FET's) is proposed in this paper. This method is applicable to MESFET's and high electron-mobility transistors described by the typical pi-model. A new set of simple expressions of the S-parameters, functions of the circuit elements of the FET complete model, is derived. These expressions are presented in graphic form to quickly compute the modules of the FET S-parameters and then the power gains, The accuracy of this approach has been proven by comparison with simulations of the FET complete model.