Research output: Contribution to Journal/Magazine › Journal article › peer-review
<mark>Journal publication date</mark> | 03/2000 |
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<mark>Journal</mark> | IEEE Transactions on Microwave Theory and Techniques |
Issue number | 3 |
Volume | 48 |
Number of pages | 5 |
Pages (from-to) | 470-474 |
Publication Status | Published |
<mark>Original language</mark> | English |
A graphical method to easily derive the power gain definitions of field-effect transistors (FET's) is proposed in this paper. This method is applicable to MESFET's and high electron-mobility transistors described by the typical pi-model. A new set of simple expressions of the S-parameters, functions of the circuit elements of the FET complete model, is derived. These expressions are presented in graphic form to quickly compute the modules of the FET S-parameters and then the power gains, The accuracy of this approach has been proven by comparison with simulations of the FET complete model.