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A simplified procedure to calculate the power gain definitions of FET's

Research output: Contribution to journalJournal article

Published

<mark>Journal publication date</mark>03/2000
<mark>Journal</mark>IEEE Transactions on Microwave Theory and Techniques
Issue3
Volume48
Number of pages5
Pages470-474
<mark>Original language</mark>English

Abstract

A graphical method to easily derive the power gain definitions of field-effect transistors (FET's) is proposed in this paper. This method is applicable to MESFET's and high electron-mobility transistors described by the typical pi-model. A new set of simple expressions of the S-parameters, functions of the circuit elements of the FET complete model, is derived. These expressions are presented in graphic form to quickly compute the modules of the FET S-parameters and then the power gains, The accuracy of this approach has been proven by comparison with simulations of the FET complete model.