Home > Research > Publications & Outputs > A single electron transistor on an atomic force...

Links

Text available via DOI:

View graph of relations

A single electron transistor on an atomic force microscope probe

Research output: Contribution to Journal/MagazineJournal articlepeer-review

Published
  • Henrik T. A. Brenning
  • Sergey E. Kubatkin
  • Donats Erts
  • Sergey Kafanov
  • Thilo Bauch
  • Per Delsing
Close
<mark>Journal publication date</mark>05/2006
<mark>Journal</mark>Nano Letters
Issue number5
Volume6
Number of pages5
Pages (from-to)937-941
Publication StatusPublished
Early online date5/04/06
<mark>Original language</mark>English

Abstract

We report fabrication as well as proof-of-concept experiments of a noninvasive sensor of weak nanoscale electric fields. The sensor is a single electron transistor (SET) placed at the tip of a noncontact atomic force microscope (AFM). This is a general technology to make any nanometer-sized lithography pattern at edges or tips of a cantilever. The height control of the AFM allows the SET to hover a few nanometers above the substrate, improving both the electric field sensitivity and lateral resolution of the electrometer. Our AFM-SET sensor is prepared by a scalable technology. It means that the probe can be routinely fabricated and replaced, if broken.