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An elegant verification of the negative charge-state of the DX centre from mobility measurements of 2D electrons

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An elegant verification of the negative charge-state of the DX centre from mobility measurements of 2D electrons. / Hayne, M ; Usher, Alan; Harris, Jeffrey J et al.
In: Surface Science, Vol. 362, No. 1-3, 1996, p. 574-578.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Hayne, M, Usher, A, Harris, JJ & Foxon, CT 1996, 'An elegant verification of the negative charge-state of the DX centre from mobility measurements of 2D electrons', Surface Science, vol. 362, no. 1-3, pp. 574-578. https://doi.org/10.1016/0039-6028(96)00476-1

APA

Hayne, M., Usher, A., Harris, J. J., & Foxon, C. T. (1996). An elegant verification of the negative charge-state of the DX centre from mobility measurements of 2D electrons. Surface Science, 362(1-3), 574-578. https://doi.org/10.1016/0039-6028(96)00476-1

Vancouver

Hayne M, Usher A, Harris JJ, Foxon CT. An elegant verification of the negative charge-state of the DX centre from mobility measurements of 2D electrons. Surface Science. 1996;362(1-3):574-578. doi: 10.1016/0039-6028(96)00476-1

Author

Hayne, M ; Usher, Alan ; Harris, Jeffrey J et al. / An elegant verification of the negative charge-state of the DX centre from mobility measurements of 2D electrons. In: Surface Science. 1996 ; Vol. 362, No. 1-3. pp. 574-578.

Bibtex

@article{c87dad52ae9143d39907eae57e99fff5,
title = "An elegant verification of the negative charge-state of the DX centre from mobility measurements of 2D electrons",
abstract = "We have measured the persistent changes in the mobility and density of the two-dimensional electron system in two modulation-doped GaAs/AlxGa1-xAs single heterojunctions at 0.3 K following illumination with an infrared light-emitting diode. One sample behaves conventionally, with an immediate increase in both density and mobility when illuminated. However, the second sample shows remarkable different behaviour, with no change in density for more than 20% of the total time taken to reach the maximum density, and an increase in mobility of more than 10% in this initial illumination period. We demonstrate that these results provide very simple and convincing evidence for the negative-charge state of the DX centre.",
keywords = "electrical transport, electrical transport measurements, gallium arsenide, heterojunctions, photoconductivity, semiconductor-semiconductor heterostructures, ALXGA1-XAS, GAAS",
author = "M Hayne and Alan Usher and Harris, {Jeffrey J} and Foxon, {C Thomas}",
year = "1996",
doi = "10.1016/0039-6028(96)00476-1",
language = "English",
volume = "362",
pages = "574--578",
journal = "Surface Science",
issn = "0039-6028",
publisher = "Elsevier",
number = "1-3",

}

RIS

TY - JOUR

T1 - An elegant verification of the negative charge-state of the DX centre from mobility measurements of 2D electrons

AU - Hayne, M

AU - Usher, Alan

AU - Harris, Jeffrey J

AU - Foxon, C Thomas

PY - 1996

Y1 - 1996

N2 - We have measured the persistent changes in the mobility and density of the two-dimensional electron system in two modulation-doped GaAs/AlxGa1-xAs single heterojunctions at 0.3 K following illumination with an infrared light-emitting diode. One sample behaves conventionally, with an immediate increase in both density and mobility when illuminated. However, the second sample shows remarkable different behaviour, with no change in density for more than 20% of the total time taken to reach the maximum density, and an increase in mobility of more than 10% in this initial illumination period. We demonstrate that these results provide very simple and convincing evidence for the negative-charge state of the DX centre.

AB - We have measured the persistent changes in the mobility and density of the two-dimensional electron system in two modulation-doped GaAs/AlxGa1-xAs single heterojunctions at 0.3 K following illumination with an infrared light-emitting diode. One sample behaves conventionally, with an immediate increase in both density and mobility when illuminated. However, the second sample shows remarkable different behaviour, with no change in density for more than 20% of the total time taken to reach the maximum density, and an increase in mobility of more than 10% in this initial illumination period. We demonstrate that these results provide very simple and convincing evidence for the negative-charge state of the DX centre.

KW - electrical transport

KW - electrical transport measurements

KW - gallium arsenide

KW - heterojunctions

KW - photoconductivity

KW - semiconductor-semiconductor heterostructures

KW - ALXGA1-XAS

KW - GAAS

U2 - 10.1016/0039-6028(96)00476-1

DO - 10.1016/0039-6028(96)00476-1

M3 - Journal article

VL - 362

SP - 574

EP - 578

JO - Surface Science

JF - Surface Science

SN - 0039-6028

IS - 1-3

ER -