We have over 12,000 students, from over 100 countries, within one of the safest campuses in the UK


97% of Lancaster students go into work or further study within six months of graduating

Home > Research > Publications & Outputs > An HBT unilateral model to design distributed a...
View graph of relations

« Back

An HBT unilateral model to design distributed amplifiers

Research output: Contribution to journalJournal article


<mark>Journal publication date</mark>06/1999
<mark>Journal</mark>IEEE Transactions on Microwave Theory and Techniques
Number of pages4
<mark>Original language</mark>English


A novel heterojunction bipolar transistor (HBT) unilateral model oriented to a fast prediction of the performance of HBT monolithic-microwave integrated-circuit distributed amplifiers is proposed. The HBT unilateral model includes, by simple expressions, the effects caused by the HBT parasitics. A graphical design procedure for HBT distributed amplifiers is also proposed. This method is based on a set of generalized charts and represents a simple and fast design tool for designers. Comparisons between the performance of specially designed HBT distributed amplifiers and the results obtained using the HBT unilateral model demonstrate the validity of the proposed approach.