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An HBT unilateral model to design distributed amplifiers

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An HBT unilateral model to design distributed amplifiers. / Paoloni, C ; D'Agostino, S .
In: IEEE Transactions on Microwave Theory and Techniques, Vol. 47, No. 6, 06.1999, p. 795-798.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Paoloni, C & D'Agostino, S 1999, 'An HBT unilateral model to design distributed amplifiers', IEEE Transactions on Microwave Theory and Techniques, vol. 47, no. 6, pp. 795-798. https://doi.org/10.1109/22.769352

APA

Paoloni, C., & D'Agostino, S. (1999). An HBT unilateral model to design distributed amplifiers. IEEE Transactions on Microwave Theory and Techniques, 47(6), 795-798. https://doi.org/10.1109/22.769352

Vancouver

Paoloni C, D'Agostino S. An HBT unilateral model to design distributed amplifiers. IEEE Transactions on Microwave Theory and Techniques. 1999 Jun;47(6):795-798. doi: 10.1109/22.769352

Author

Paoloni, C ; D'Agostino, S . / An HBT unilateral model to design distributed amplifiers. In: IEEE Transactions on Microwave Theory and Techniques. 1999 ; Vol. 47, No. 6. pp. 795-798.

Bibtex

@article{c1ec82dc3a994347ba3f3eab6a6f02f1,
title = "An HBT unilateral model to design distributed amplifiers",
abstract = "A novel heterojunction bipolar transistor (HBT) unilateral model oriented to a fast prediction of the performance of HBT monolithic-microwave integrated-circuit distributed amplifiers is proposed. The HBT unilateral model includes, by simple expressions, the effects caused by the HBT parasitics. A graphical design procedure for HBT distributed amplifiers is also proposed. This method is based on a set of generalized charts and represents a simple and fast design tool for designers. Comparisons between the performance of specially designed HBT distributed amplifiers and the results obtained using the HBT unilateral model demonstrate the validity of the proposed approach.",
author = "C Paoloni and S D'Agostino",
year = "1999",
month = jun,
doi = "10.1109/22.769352",
language = "English",
volume = "47",
pages = "795--798",
journal = "IEEE Transactions on Microwave Theory and Techniques",
issn = "0018-9480",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "6",

}

RIS

TY - JOUR

T1 - An HBT unilateral model to design distributed amplifiers

AU - Paoloni, C

AU - D'Agostino, S

PY - 1999/6

Y1 - 1999/6

N2 - A novel heterojunction bipolar transistor (HBT) unilateral model oriented to a fast prediction of the performance of HBT monolithic-microwave integrated-circuit distributed amplifiers is proposed. The HBT unilateral model includes, by simple expressions, the effects caused by the HBT parasitics. A graphical design procedure for HBT distributed amplifiers is also proposed. This method is based on a set of generalized charts and represents a simple and fast design tool for designers. Comparisons between the performance of specially designed HBT distributed amplifiers and the results obtained using the HBT unilateral model demonstrate the validity of the proposed approach.

AB - A novel heterojunction bipolar transistor (HBT) unilateral model oriented to a fast prediction of the performance of HBT monolithic-microwave integrated-circuit distributed amplifiers is proposed. The HBT unilateral model includes, by simple expressions, the effects caused by the HBT parasitics. A graphical design procedure for HBT distributed amplifiers is also proposed. This method is based on a set of generalized charts and represents a simple and fast design tool for designers. Comparisons between the performance of specially designed HBT distributed amplifiers and the results obtained using the HBT unilateral model demonstrate the validity of the proposed approach.

U2 - 10.1109/22.769352

DO - 10.1109/22.769352

M3 - Journal article

VL - 47

SP - 795

EP - 798

JO - IEEE Transactions on Microwave Theory and Techniques

JF - IEEE Transactions on Microwave Theory and Techniques

SN - 0018-9480

IS - 6

ER -