Rights statement: Copyright 2016 Society of Photo-Optical Instrumentation Engineers. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.
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TY - GEN
T1 - Analysing radiative and non-radiative recombination in InAs quantum dots grown on Si substrates for integrated laser applications
AU - Orchard, Jonathan
AU - Woodhead, Christopher
AU - Shutts, Samuel
AU - Wu, Jiang
AU - Sobiesierski, Angela
AU - Young, Robert James
AU - Beanland, R
AU - Liu, Huiyun
AU - Smowton, Peter
AU - Mowbray, David
N1 - Copyright 2016 Society of Photo-Optical Instrumentation Engineers. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.
PY - 2016/3/15
Y1 - 2016/3/15
N2 - Three InAs quantum dot (QD) samples with dislocation filter layers (DFLs) are grown on Si substrates with and without in-situ annealing. Comparison is made to a similar structure grown on a GaAs substrate. The three Si grown samples have different dislocation densities in their active region as revealed by structural studies. By determining the integrated emission as a function of laser power it is possible to determine the power dependence of the radiative efficiency and compare this across the four samples. The radiative efficiency increases with decreasing dislocation density; this also results in a decrease in the temperature quenching of the PL. A laser structures grown on Si and implementing the same optimum DFL and annealing procedure exhibits a greater than 3 fold reduction in threshold current as well as a two fold increase in slope efficiency in comparison to a device in which no annealing is applied.
AB - Three InAs quantum dot (QD) samples with dislocation filter layers (DFLs) are grown on Si substrates with and without in-situ annealing. Comparison is made to a similar structure grown on a GaAs substrate. The three Si grown samples have different dislocation densities in their active region as revealed by structural studies. By determining the integrated emission as a function of laser power it is possible to determine the power dependence of the radiative efficiency and compare this across the four samples. The radiative efficiency increases with decreasing dislocation density; this also results in a decrease in the temperature quenching of the PL. A laser structures grown on Si and implementing the same optimum DFL and annealing procedure exhibits a greater than 3 fold reduction in threshold current as well as a two fold increase in slope efficiency in comparison to a device in which no annealing is applied.
KW - Quantum dots
KW - Nanostructures
KW - Telecoms
KW - Epitaxy
KW - semiconductor
U2 - 10.1117/12.2209693
DO - 10.1117/12.2209693
M3 - Conference contribution/Paper
SN - 9781628419931
VL - 9758
T3 - Proceedings of SPIE
BT - Proceedings Volume 9758, Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XIII
A2 - Huffaker, Diana L.
A2 - Eisele, Holger
A2 - Dick, Kimberly A.
PB - SPIE
ER -